High Bandwidth Capacitance Efficient Silicon MOS Modulator

Zhang, Weiwei; Debnath, Kapil; Chen, Bigeng; Li, Ke; Liu, Shenghao; Ebert, Martin; Reynolds, Jamie D.; Khokhar, Ali Z.; Littlejohns, Callum G.; Byers, James; Husain, Muhammad; Gardès, Frédéric; Saito, Shinichi; Thomson, David J.

doi:10.1109/jlt.2020.3026945

Cited by 22 publications

(3 citation statements)

References 36 publications

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“…In contrast, electro-optic (EO)-based modulators offer precise optical phase control with minimal crosstalk, making them indispensable for large-scale, compact photonic circuits. The stateof-the-art silicon photonic EO modulators, based on plasma dispersion [7,8], exhibit the highest modulation strength. These operate with an accumulation-type structure, where carriers accumulate near the SiO 2 dielectric layer between the N-doped and P-doped waveguides under an applied electric potential.…”

Section: Introductionmentioning

confidence: 99%

A Design of High-Efficiency: Vertical Accumulation Modulators Based on Silicon Photonics

Zhou,

Li,

Qiu

et al. 2023

Nanomaterials

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On-chip optical modulators, which are capable of converting electrical signals into optical signals, constitute the foundational components of photonic devices. Photonics modulators exhibiting high modulation efficiency and low insertion loss are highly sought after in numerous critical applications, such as optical phase steering, optical coherent imaging, and optical computing. This paper introduces a novel accumulation-type vertical modulator structure based on a silicon photonics platform. By incorporating a high-K dielectric layer of ZrO2, we have observed an increase in modulation efficiency while maintaining relatively low levels of modulation loss. Through meticulous study and optimization, the simulation results of the final device structure demonstrate a modulation efficiency of 0.16 V·cm, with a mere efficiency–loss product of 8.24 dB·V.

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Section: Introductionmentioning

confidence: 99%

A Design of High-Efficiency: Vertical Accumulation Modulators Based on Silicon Photonics

Zhou,

Li,

Qiu

et al. 2023

Nanomaterials

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“…Additionally, for the investigated structure, the SPP mode of the metal-Ge/SiGe MQWs interface exists as a TM mode [40]; therefore, we will consider quasi-TM polarized light in the simulation. Although polarization dependence can be disadvantageous for optical telecommunication applications, for chip-scale optical interconnects it is typical to optimize optical components to operate either in quasi-transverseelectric (TE) [41] or TM mode [42][43][44].…”

Section: Introductionmentioning

confidence: 99%

An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors

et al. 2022

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We report on 3-D FDTD simulation of waveguideintegrated plasmonic Ge/SiGe MQWs photodetectors. Despite several significant works on Ge/SiGe MQW optical modulators, Ge/SiGe MQW photodetectors still show improvable performance, limiting the potential to employ them for both optical modulation and detection. In this paper, we investigate the use of plasmonic concept to enhance electromagnetic field confinement inside the Ge/SiGe MQWs absorbing region with a view to having a compact and low-voltage waveguide-integrated Ge/SiGe MQWs photodetectors. Optical responsivities in term of applied electric fields, device dimensions of width and length, optical bandwidth, fabrication misalignment, and number of QWs periods are taken into account. The investigation shows that using plasmonic enhancement, a waveguide-integrated Ge/SiGe MQWs photodetector that is as short as 5 µm could be obtained with comparable responsivity and bias voltage values to some of the state-of-the-art bulk Ge-based devices, increasing the potential usage of Ge/SiGe MQWs for both optical modulation and detection in low-energy optical interconnects.

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“…Silicon photonics is commonly regarded as a promising solution for data-center transmitters due to its advantages as low-cost, strong mode confinement and compatibility with matured Complementary Metal Oxide Semiconductor (CMOS) technologies [1]- [3]. As the data capacity of silicon transmitter depends significantly on the modulator bandwidth, silicon integrated modulators have been investigated extensively in the past decade [4]- [6].…”

mentioning

confidence: 99%

Multi-Mode Transmitter Based on Silicon Microring Modulators

Zhang

et al. 2022

IEEE Photonics J.

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We propose and demonstrate a multi-mode transmitter based on cascaded silicon microring modulators (MRMs). By sharing bus waveguide at drop ports of the MRMs, data modulation and mode multiplexing could be achieved simultaneously, resulting in a simplified layout with compact size. For the proof-of-concept demonstration, multi-mode transmitter for TE0 and TE1 modes is fabricated. Transmission of non-return-to-zero on-off keying (NRZ-OOK) signals with the bit rate of 2 × 25 Gbps is experimentally demonstrated. Measured eye diagrams and bit error rate (BER) results indicate good transmission performance.

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High Bandwidth Capacitance Efficient Silicon MOS Modulator

Cited by 22 publications

References 36 publications

A Design of High-Efficiency: Vertical Accumulation Modulators Based on Silicon Photonics

A Design of High-Efficiency: Vertical Accumulation Modulators Based on Silicon Photonics

An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors

Multi-Mode Transmitter Based on Silicon Microring Modulators

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