High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator

Study of HfAlO/AlGaN/GaN MOS-HEMT with source field plate structure for improved breakdown voltage

“…In order to enhance the breakdown voltage few techniques are proposed. Dong et al reported AlGaN/GaN MOS-HEMT having thermally oxidized Ni/Ti gate insulator possessing a high breakdown voltage of 471 V [13]. Bin et al used Al/Ti as gate insulator in AlGaN/GaN MOS-HEMT to achieve the breakdown voltage of 490 V [14].…”