High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO/sub 2/ Gate Insulator

Yagi, Shuichi; Shimizu, Mitsuaki; Inada, Masaki; Yamamoto, Y.; Piao, Guilin; Yano, Yoshiki; Okumura, H.

doi:10.1109/isdrs.2005.1596094

Cited by 7 publications

(7 citation statements)

References 3 publications

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“…These results show that the electrical performance can be enhanced through the surface passivation and gate insulation. The similar behaviors of AlGaN/GaN MOS-HEMTs with different gate insulators can be observed in other reports (Kikuta et al, 2006;Yagi et al, 2006). Investigating dielectrics with high permittivity is an interesting issue for better highfrequency and high-performances due to the suppression of gate leakage current and…”

Section: Electron-beam Deposition Methodssupporting

confidence: 79%

“…Several conventional gate oxides such as Ga 2 O 3 (Gd 2 O 3 ), SiO 2 , TiO 2 , AlN, MgO, Ta 2 O 5 , Pr 2 O 3 and stack dielectrics have been deposited using e-beam deposition system for gate insulators of GaN-based MOS devices (Hong et al, 2000;Arulkumaran et al, 2005;Kikuta et al, 2006;Yagi et al, 2006;Chiu et al, 2008). Figure 10 shows the typical capacitancevoltage characteristics of GaN MOS diode with Ga 2 O 3 (Gd 2 O 3 ) as the gate insulator, measured at various frequencies.…”

Section: Electron-beam Deposition Methodsmentioning

confidence: 99%

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GaN-based Metal-Oxide-Semiconductor Devices

Lee¹

2010

Semiconductor Technologies

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Section: Electron-beam Deposition Methodssupporting

confidence: 79%

Section: Electron-beam Deposition Methodsmentioning

confidence: 99%

GaN-based Metal-Oxide-Semiconductor Devices

Lee¹

2010

Semiconductor Technologies

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“…High-κ materials are widely employed as insulators growing on semiconductor to fabricate metal-oxide-semiconductor (MOS) gates for larger gate swing voltages and lower leakage currents [ 7 , 8 , 9 ]. Titanium dioxide (TiO 2 ) is one of the commonly applied high-κ insulators in the semiconductor industry.…”

Section: Introductionmentioning

confidence: 99%

Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric

et al. 2016

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This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO2) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal annealing (RTA) were consecutively employed before and after the gate dielectric was deposited to fill dangling bonds and therefore release interface trapped charges. Compared with a benchmark PHEMT, the AlGaAs/InGaAs MOS-PHEMT using LPD-TiO2 exhibited larger gate bias operation, higher breakdown voltage, suppressed subthreshold characteristics, and reduced flicker noise. As a result, the device with proposed process and using LPD-TiO2 as a gate dielectric is promising for high-speed applications that demand little noise at low frequencies.

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“…AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates are very promising in commercial applications of RF power devices and high-breakdown switchers [1,2], with the combined advantages of high breakdown field of the GaN-based materials, and high thermal conductivity and potential low manufacturing cost of the Si substrates. Compared with those on SiC or sapphire substrates, the AlGaN/GaN HEMTs grown on Si substrates suffer from poorer crystalline quality, smaller critical-layer thickness and higher buffer leakage current density, which limit their applications.…”

Section: Introductionmentioning

confidence: 99%

Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD

Wang

Deng

et al. 2010

Sci. China Phys. Mech. Astron.

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AlGaN/GaN high electron mobility transistors (HEMTs) were grown on Si substrates by MOCVD. In the HEMT structure, a 1 μm GaN buffer layer was partially doped with Mg in an attempt to increase the resistivity and minimize the buffer leakage. The AlGaN/GaN HEMTs grown on undoped and partially Mg-doped GaN buffer layers were processed and the DC characteristics of the devices were characterized for comparing the effect of Mg doping. For the device with the partially Mg-doped GaN buffer layer, a lower drain leakage current density of 55.8 nA/mm, a lower gate leakage current density of 2.73 µA/mm, and a higher off-state breakdown voltage of 104 V were achieved with device dimensions L g /W g /L gs /L gd =1/10/1/1 μm, better than the device with the undoped GaN buffer layer, which has a higher drain leakage current density of 9.2 μA/mm, a higher gate leakage current density of 91.8 µA/mm, and a lower off-state breakdown voltage of 87 V with the same device dimensions. AlGaN/GaN HEMT, Si substrate, MOCVD, breakdown voltage, Mg-doped

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High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO/sub 2/ Gate Insulator

Cited by 7 publications

References 3 publications

GaN-based Metal-Oxide-Semiconductor Devices

GaN-based Metal-Oxide-Semiconductor Devices

Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric

Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD

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