High-breakdown-voltage GaN-based vertical FinFET design

Wang, Zilong; Liu, Liang; Qi, Peiyue; Chen, Jiawei; Zhao, Lixia

doi:10.1007/s43236-023-00735-8

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2024

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Cited by 3 publications

References 32 publications

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Temperature dependence electron conduction in horizontally aligned trapezoidal-shaped AlGaN/GaN nanowire wrap-gate transistor

Choi,

Puneetha,

Mallem

et al. 2024

J Mater Sci: Mater Electron

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Temperature dependence electron conduction in horizontally aligned trapezoidal-shaped AlGaN/GaN nanowire wrap-gate transistor

Choi,

Puneetha,

Mallem

et al. 2024

J Mater Sci: Mater Electron

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Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer

Yi,

Wu,

Gao

et al. 2024

Semicond. Sci. Technol.

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In this paper, we propose an enhanced superjunction AlGaN/GaN current aperture vertical electron transistor (CAVET) that integrates a novel hybrid InGaN/AlN/InGaN current blocking layer (CBL) situated above the P-column, directly beneath the channel. The incorporation of InGaN substantially elevates the device's saturation output current by introducing a subchannel beneath the AlGaN/GaN heterojunction conducting channel.Nonetheless, the introduction of AlN engenders a two-dimensional hole gas (2DHG) of opposite polarisation direction via the GaN/AlN heterojunction, which aids in depleting the two-dimensional electron gas (2DEG) within the channel, thereby mitigating the issue of negative threshold voltage (Vth) bias occasioned by the subchannel introduced by InGaN. The outcomes demonstrate that the maxim m saturation output current (u u Id) for the proposed architecture is 361.5 mA/mm, with a Vth of 1.63V, marking increases of 98.6% and 0.08%over the traditional superjunction CAVET, respectively. Simultaneously, the breakdownvoltage (Vbr) of the designed device is recorded at 12064 V, and the specific on-resistance(Ron,sp) is 6.45 Ω·mm, showcasing a enhancement figure of merit (FOM) of 32.9% incomparison to the traditional superjunction CAVET.

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Compact Modeling of Power GaN Fin-JFETs I-V Characteristics using ASM-HEMT Model

Bavi,

Khandelwal

2024

2024 IEEE Texas Power and Energy Conference (TPEC)

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High-breakdown-voltage GaN-based vertical FinFET design

Cited by 3 publications

References 32 publications

Temperature dependence electron conduction in horizontally aligned trapezoidal-shaped AlGaN/GaN nanowire wrap-gate transistor

Temperature dependence electron conduction in horizontally aligned trapezoidal-shaped AlGaN/GaN nanowire wrap-gate transistor

Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer

Compact Modeling of Power GaN Fin-JFETs I-V Characteristics using ASM-HEMT Model

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