High Breakdown Voltage Gan Schottky Diodes for Thz Frequency Multipliers

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

“…The model includes a detailed numerical treatment of IC, shown to be necessary to reproduce experimental results, and the influence of the epilayer doping in the shape of the barrier. Current-voltage-temperature characteristics measured in GaN-on-SiC SBDs fabricated at IEMN 27 have been used to validate the model, thereby finding always excellent agreement in the forward bias and also for the highest temperatures in the reverse bias, thus corroborating the good quality of the technological process used. For temperatures below 400 K, leakage current in excess is observed and attributed to trap-assisted tunneling.…”

“…GaN-on-SiC SBDs fabricated at IEMN have been characterized to validate the model. 27 The epitaxial layer was grown at CRHEA by metal organic vapor phase epitaxy on a semi-insulating 6H-SiC substrate. A SEM image of one of the diodes is shown in A 490 nm unintentionally doped GaN was grown first, followed by a highly doped 950 nm thick GaN layer (300 nm @ 1 × 10 19 cm −3 and 650 nm @ 2 × 10 19 cm −3 ) to achieve a good ohmic contact and a low series resistance, and finally a 1 μm n − GaN layer (nominally 6.6 × 10 16 cm −3 ) acting as the Schottky layer.…”