High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate

Zhou, Yi; Wang, Dake; Ahyi, Claude; Tin, C. C.; Williams, John R.; Park, Minseo; Williams, Nicole; Hanser, Α.

doi:10.1016/j.sse.2006.09.009

Cited by 39 publications

(17 citation statements)

References 26 publications

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“…The schematics of devices on the two substrates were shown in Figure 1 and Figure 2, respectively. tacts compared to the data from our previous report [4]. The turn-on voltage of the device was 0.95 V, and the ideality factor ranged from 1.05-1.09.…”

Section: Fabricationmentioning

confidence: 84%

Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer

Wang

Alur

et al. 2011

Phys. Status Solidi C

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Vertical Schottky rectifiers were fabricated on two GaN wafers synthesised by hydride vapor phase epitaxy (HVPE) process: n‐ epilayer on n+ bulk and n‐ bulk. Full backside ohmic contact and circular Schottky contacts were deposited on the N face and Ga face of the substrate, respectively. The devices showed excellent electrical characteristics. The device fabricated on n‐ epilayer on n+ bulk substrate showed a breakdown voltage of 348 V, a specific on‐state resistance of 4.2 mΩ·cm2 and a leakage current density of 9.2×10‐6 A/cm2 at ‐90 V. The device fabricated on n‐ bulk substrate showed a breakdown voltage of 600 V, a specific on‐state resistance of 1.3 mΩ·cm2 and a leakage current density of 8.1×10‐8 A/cm2 at ‐100 V. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Fabricationmentioning

confidence: 84%

Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer

Wang

Alur

et al. 2011

Phys. Status Solidi C

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“…[6][7][8][9][10][11][12] However, the epitaxial structures are not compatible with HEMT. The power rectifier features a Schottky-gate-controlled two-dimensional electron gas channel between the cathode and anode.…”

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confidence: 99%

“…For the SBDs formed on AlGaN / GaN HEMT, V k is determined by the metal/AlGaN Schottky barrier as well as the conduction band offset at the AlGaN / GaN heterointerface. [6][7][8][9][10][11][12]14,15 The much lower V F,ON is attributed to the turn-on control scheme by the channel threshold voltage instead of Schottky junction or p-i-n junction. The specific on-resistance ͑R ON,sp ͒ is 1.4 m⍀ cm 2 in the L-FER, where R ON,sp is calculated in the forward bias range of 2 -3 V using the area of the active region excluding the Ohmic contacts.…”

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confidence: 99%

High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors

Chen

Wong

Huang

et al. 2008

Applied Physics Letters

139

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A high electron mobility transistor (HEMT)-compatible power lateral field-effect rectifier (L-FER) with low turn-on voltage is demonstrated using the same fabrication process as that for normally off AlGaN∕GaN HEMT, providing a low-cost solution for GaN power integrated circuits. The power rectifier features a Schottky-gate-controlled two-dimensional electron gas channel between the cathode and anode. By tying up the Schottky gate and anode together, the forward turn-on voltage of the rectifier is determined by the threshold voltage of the channel instead of the Schottky barrier. The L-FER with a drift length of 10μm features a forward turn-on voltage of 0.63V at a current density of 100A∕cm2. This device also exhibits a reverse breakdown voltage (BV) of 390V at a current level of 1mA∕mm and a specific on resistance (RON,sp) of 1.4mΩcm2, yielding a figure of merit (BV2∕RON,sp) of 108MW∕cm2. The excellent device performance, coupled with the lateral device structure and process compatibility with AlGaN∕GaN HEMT, make the proposed L-FER a promising candidate for GaN power integrated circuits.

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“…However, a relatively little research on the fabrication of bulk GaN-based Schottky diodes has been carried out. Therefore, we have recently fabricated a vertical GaN rectifier with a relatively high breakdown field of 5.5kV/cm with no edge termination [2]. Schottky contacts (Pt) and a full backside ohmic contact (Ti/Al) were prepared on the Ga-and Nface of the substrate, respectively.…”

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confidence: 99%