2022
DOI: 10.1016/j.nanoen.2022.106974
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High brightness and stability pure-blue perovskite light-emitting diodes based on a novel structural quantum-dot film

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Cited by 50 publications
(39 citation statements)
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“…71 The TRPL can not only reflect the traps-assisted and Auger recombination, but it can also reflect the non-radiative loss at the interfaces. 15,72 By comparing the TRPL spectra of the perovskite with and without HTL/ETL, we can measure the non-radiative recombination events at the two contact interfaces. If the adding of charge-transport layers does not influence lifetime of carriers, it can indicate non-radiative recombination events at the two contact interfaces are insignificant.…”
Section: Transient Spectroscopymentioning
confidence: 99%
See 1 more Smart Citation
“…71 The TRPL can not only reflect the traps-assisted and Auger recombination, but it can also reflect the non-radiative loss at the interfaces. 15,72 By comparing the TRPL spectra of the perovskite with and without HTL/ETL, we can measure the non-radiative recombination events at the two contact interfaces. If the adding of charge-transport layers does not influence lifetime of carriers, it can indicate non-radiative recombination events at the two contact interfaces are insignificant.…”
Section: Transient Spectroscopymentioning
confidence: 99%
“…12 In addition, the non-optimal energy level alignment together with unbalanced charge injection within PeLEDs leads to carrier accumulation at the interfaces, which increases the probability of Auger recombination and deteriorate the device performance. [13][14][15][16] Furthermore, the presence of abundant defects and non-radiative recombination in PeLEDs will also impair their operational stability. The defects, acting as ionic shuttles, were shown to boost the migration of ions such as halides and thus cause the shift of emission wavelength, which reduce the color purity and long-term spectra stability of PeLEDs.…”
Section: Introductionmentioning
confidence: 99%
“…Quantum-dot (QD) light-emitting diodes (QLEDs) have shown considerable potential for application in next-generation highdefinition displays owing to their high photoluminescence (PL) efficiency and wide color gamut, as well as cost-effective solution processability. [1][2][3][4][5][6] The performance of QLEDs has been improved remarkably in the past decade. [7][8][9][10] To date, the external quantum efficiency (EQE) and luminance (L) of the state-of-the-art QLEDs have reached more than 20% and 1 000 000 cd m À2 , respectively, which almost satisfy the application requirements for displays.…”
Section: Introductionmentioning
confidence: 99%
“…Such shortcomings markedly impede the realization of electroluminescence (EL) covering the whole visible region. 32,33 (ii) The short PeLED lifetime under operating conditions (ranging from T 50 = 59 h (for blue) 34 to 682 h (for near-infrared emissions)). 35 These numbers are very far away from the current high-performing OLEDs, which have a lifetime of over 6 × 10 6 h. 35–37…”
Section: Introductionmentioning
confidence: 99%
“…Such shortcomings markedly impede the realization of electroluminescence (EL) covering the whole visible region. 32,33 (ii) The short PeLED lifetime under operating conditions (ranging from T 50 = 59 h (for blue) 34 to 682 h (for near-infrared emissions)). 35 These numbers are very far away from the current high-performing OLEDs, which have a lifetime of over 6 Â 10 6 h. [35][36][37] Until now, the device degradation mechanism has not been well understood; however, studies have shown that the existence of defects in the perovskite emissive layer may lead to ion migration, hysteresis, non-radiative charge recombination, etc., which are detrimental to the device performance.…”
Section: Introductionmentioning
confidence: 99%