Handbook of Optoelectronic Device Modeling and Simulation 2017
DOI: 10.4324/9781315152318-4
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High-Brightness Laser Diodes with External Feedback

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(4 citation statements)
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“…From this comparative study it seems that the monolithically integrated Ge-absorber region deteriorated the beam quality of the tapered amplifier. This conclusion contradicts previous results obtained in both broad area lasers [18,26] and in free-standing tapered lasers including absorbing regions located on either side of the stripe, that have proven to improve the beam quality of such devices [19].…”
Section: Investigation Of the Beam Qualitycontrasting
confidence: 97%
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“…From this comparative study it seems that the monolithically integrated Ge-absorber region deteriorated the beam quality of the tapered amplifier. This conclusion contradicts previous results obtained in both broad area lasers [18,26] and in free-standing tapered lasers including absorbing regions located on either side of the stripe, that have proven to improve the beam quality of such devices [19].…”
Section: Investigation Of the Beam Qualitycontrasting
confidence: 97%
“…As reported in [19], free-standing tapered lasers with highly reflective rear facets can show improved beam quality and higher η CL when reverse bias absorber sections are included on either side of the ridge section, to suppress intensity in backwards propagating modes. Even when low facet reflectivities are used, the residual backwards propagating field has been predicted to play a role in limiting beam quality [26], especially when it induces bleaching around the ridge waveguide section, hindering its effectiveness as a mode filter. We therefore assess the benefit here of similar absorber sections on the beam quality, resulting coherent combining efficiency and phase noise, monolithically implemented here using highly absorbing Ge-layers that are designed to resonantly absorb any guided mode, using the designs process reported in [27], which has successfully suppressed higher order lateral modes and improved beam quality in high power broad area lasers.…”
Section: Lateral (In-plane) Tapered Amplifier Designmentioning
confidence: 99%
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