High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays

Kim, Hwa-Mok; Cho, Yong-Hoon; Lee, Ho-Sang; Kim, Suk Il; Ryu, Sang Baek; Kim, Deuk Young; Kang, Tae Won; Chung, Kwansoo

doi:10.1021/nl049615a

Cited by 557 publications

(314 citation statements)

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“…There are many publications on the growth and fabrication of GaN nanoLEDs, first reports starting as early as 2004. 113,114 A. Top down GaN nanoLED and properties A straightforward method to fabricate GaN nanoLEDs is to etch planar GaN LEDs with nanomasks.…”

Section: Gan Nanoledmentioning

confidence: 99%

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GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

495

394

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

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Section: Gan Nanoledmentioning

confidence: 99%

“…113 In this work, the GaN nanorods were grown by MO-HVPE. The structures of processed devices and EL properties are shown in Fig.…”

Section: B Bottom Up Axial Nanoledsmentioning

confidence: 99%

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GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

495

394

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“…[1][2][3] Traditionally, self-assembled one-dimensional nitride nanocrystals, nanocolumns, nanorods and nanowires have been actively studied. [2][3][4][5][6][7][8][9][10][11] However, it is difficult to design optical cavities and obtain stable characteristics for these structures because of the nonuniformity of the nanocrystal configurations. Recently, selectivearea growth (SAG) techniques have been developed to overcome such problems.…”

Section: Introductionmentioning

confidence: 99%

Crystal structure and optical properties of a high-density InGaN nanoumbrella array as a white light source without phosphors

et al. 2016

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We demonstrated the fabrication of a peculiar GaN/InGaN-based high-density nanocrystal array on a nitrogen polarity GaN layer using a simple self-assembly process for the first time. The nanocrystals consist of bending InGaN nanoplates and supporting GaN nanocolumns. The nanocrystals are umbrella shaped with diameters of ∼ 200-700 nm; therefore, they are referred to as InGaN nanoumbrellas. Transmission electron microscopy revealed the crystal structures of the nanoumbrellas and provided information about their growth mechanism. The photoluminescence (PL) properties of the InGaN nanoumbrellas were also characterized, and an extremely wide range of optical emission wavelengths (∼360-800 nm) was obtained from a small excitation diameter of ∼ 10 μm. Multiple sharp peaks resembling lasing actions were also observed in the PL spectrum; the resonant mode was likely caused by the whispering gallery mode. These results indicate that the high-density GaN/InGaN-based nanoumbrella array can be used as a source of white light without phosphors.

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“…Photonic devices based on low-dimensional semiconductors; (a) quantum wells, [1] (b) quantum wires, [2] (c) quantum dots. [3] Fig .…”

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confidence: 99%