2013
DOI: 10.1109/lpt.2013.2273614
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High Brightness, Narrow Bandwidth DBR Diode Lasers at 1120 nm

Abstract: In this letter, we report on monolithic distributed Bragg reflector ridge waveguide diode lasers. The lasers feature highly strained InGaAs quantum wells and fifth order surface gratings for a stabilized emission wavelength~1120 nm. Output powers up to 1 W and a maximum conversion efficiency of 34% were achieved in a spatial and spectral single-mode. In a preliminary reliability test, at 0.4 W a lifetime of > 1000 h could be demonstrated. Therefore, the laser sources should allow for an efficient non-linear fr… Show more

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Cited by 13 publications
(3 citation statements)
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“…At the rear end the ridge contains the DBR-grating with a length of 1 mm. The DBR reflectivity is typically greater than 60% [7]. The rear facet is anti-reflection coated with R < 0.1% to suppress unwanted Fabry-Perot laser modes and the front facet reflectivity is set between 1 % and 60 %, balancing between low threshold currents and sufficient output power to seed one (or multiple) tapered amplifier(s).…”
Section: Master-oscillatormentioning
confidence: 99%
“…At the rear end the ridge contains the DBR-grating with a length of 1 mm. The DBR reflectivity is typically greater than 60% [7]. The rear facet is anti-reflection coated with R < 0.1% to suppress unwanted Fabry-Perot laser modes and the front facet reflectivity is set between 1 % and 60 %, balancing between low threshold currents and sufficient output power to seed one (or multiple) tapered amplifier(s).…”
Section: Master-oscillatormentioning
confidence: 99%
“…The TPA subject to this study is based on AlGaAs, where the active zone is a double quantum well which is embedded asymmetrically into a 4.8 µm thick waveguide. Further information on the vertical structure and processing steps are found in [9] while the use of such a TPA is presented in [4]. The lateral design of the edge emitting TPA is shown schematically in fig.…”
Section: Tapered Amplifier Emitting At 1120 Nmmentioning
confidence: 99%
“…The layer structure was grown by metalorganic vapor phase epitaxy. The active layer is formed by an InGaAs double quantum well which is embedded asymmetrically into a 4.8 µm thick vertical waveguide core [10,11]. The laser dynamics is analyzed using traveling wave equations for the slowly varying complex amplitudes E + (z,t) and E -(z,t) of the counter-propagating optical fields within each section of the device [7,8] incorporated in [12]…”
Section: Laser Structure and Equationsmentioning
confidence: 99%