High carbon doping of GaAs using trisdimethylaminoarsenic and trimethylgallium in chemical beam epitaxy

Lamare, Bruno; Benchimol, J.L.; Juhel, M.; Akamatsu, B.; Legay, P.; Alexandre, François

doi:10.1016/0022-0248(94)90236-4

Cited by 5 publications

(4 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Nonetheless, several studies have reported high doping levels attributed to the presence of carbon in homoepitaxial GaAs grown from TMGa. [10][11][12] In addition, our own previous I(V) measurements 9 were consistent with a p-type non-intentional doping possibly due to carbon incorporation. It is then of primary importance for applications to evaluate the concentration of carbon from TMGa and the resulting dopant level in ELTOn microcrystals.…”

Section: Introductionsupporting

confidence: 84%

“…Moreover, it is interesting to note that hydrogen from the remaining GaCH 3 ligands also has also a strong H-C binding energy (410 kJ/mol) and is incorporated at the same time. 12 The hydrogen passivation property of acceptor impurities (and donors) in GaAs may induce an effective free carrier concentration lower than carbon level. Otherwise, C atoms being a IV element can dope the III-V semiconductors such as GaAs both p or n depending on growth conditions and its position in the lattice crystal.…”

Section: A Atom Probe Tomographymentioning

confidence: 99%

“…Indeed, it is often observed in carbon doped GaAs that not all carbon atoms are electrically active, and the effective hole concentration is substantially lower than the carbon concentration. 12,26 Furthermore, the higher the carbon concentration, the higher the fraction of passivated carbon. 27 The same phenomenon occurs for the compensation effect.…”

Section: Micro-photoluminescencementioning

confidence: 99%

See 2 more Smart Citations

GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium

Molière

Jaffré

Alvarez

et al. 2017

Journal of Applied Physics

View full text Add to dashboard Cite

International audienceThe monolithic integration of III-V semiconductors on silicon and particularly of GaAs has aroused great interest since the 1980s. Potential applications are legion, ranging from photovoltaics to high mobility channel transistors. By using a novel integration method, we have shown that it is possible to achieve heteroepitaxial integration of GaAs crystals (typical size 1 lm) on silicon without any structural defect such as antiphase domains, dislocations, or stress, usually reported for direct GaAs heteroepitaxy on silicon. However, concerning their electronic properties, conventional free carrier characterization methods are impractical due to the micrometric size of GaAs crystals. In order to evaluate the GaAs material quality for optoelectronic applications, a series of indirect analyses such as atom probe tomography, Raman spectroscopy, and micro-photoluminescence as a function of temperature were performed. These revealed a high content of partially electrically active carbon originating from the trimethylgallium used as the Ga precursor. Nevertheless, the very good homogeneity observed by this doping mechanism and the attractive properties of carbon as a dopant once controlled to a sufficient degree are a promising route to device doping

show abstract

Section: Introductionsupporting

confidence: 84%

Section: A Atom Probe Tomographymentioning

confidence: 99%

Section: Micro-photoluminescencementioning

confidence: 99%

See 1 more Smart Citation

GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium

Molière

Jaffré

Alvarez

et al. 2017

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…4. 6 In solid source molecular beam epitaxy ͑MBE͒, the limitation at about 7 m/h is the Ga splitting from the gallium cell, which must be heated at too high temperature. Thanks to the high conductance ͑HC͒ line, GaAs growth rate above 10 m/h is reached with a minimal TEG source temperature of only 28°C.…”

Section: Growth Ratementioning

confidence: 99%

High growth rate of III–V compounds by free carrier gas chemical beam epitaxy

Benchimol

Juhel

Petitjean³

et al. 1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

We present in this article a simple and economic gas line designed for low vapor pressure metalorganic sources introduced into a chemical beam epitaxy chamber without carrier gas. This gas line was tested with triethylgallium and trimethylindium for the growth of GaAs and InP layers. The high conductance of the line allowed minimizing the heating of the source and reaching growth rate as high as 12 m/h for GaAs. The lower InP growth rate was attributed to the higher viscosity of trimethylindium compared to triethylgallium.

show abstract