High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

Isberg, Jan; Hammersberg, J.; Johansson, Erik M. J.; Wikström, T.; Twitchen, Daniel J.; Whitehead, Andrew L.; Coe, Steven E.; Scarsbrook, G. A.

doi:10.1126/science.1074374

Cited by 1,161 publications

(530 citation statements)

References 20 publications

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“…At the same time, it is nonresistant to oxidation and reactive with ferrous metals. The growing demand for advanced superhard materials in cutting and shaping hard metals and ceramics [2], as well as in electronic [3] and electrochemical [4] applications, has stimulated the search for novel diamondlike phases that are more thermally and chemically stable than pure diamond.…”

mentioning

confidence: 99%

“…The traces of boron impurities change the electrical properties of diamond from an insulator into a semiconductor [3,4]. Moreover, boron-doped diamond was reported to be a type-II superconductor with transition temperature T c % 5 K [5], while heavily boron-doped diamond (!20 at% B) is predicted to be a superconductor with very high, up to 55 K, T c [6].…”

mentioning

confidence: 99%

“…Nitrogen and 4:1 methanol-ethanol mixture have been used as a pressure medium to maintain quasihydrostatic conditions. The fit of the two-parameter Birch equation of state to the experimental data have given the values of bulk modulus B 0 ¼ 335 AE 8 GPa and its first pressure derivative B 0 0 ¼ 4:5 AE 0:6, with the zero-pressure cell volume V 0 ¼ 0:04802 AE 0:00005 nm 3 . The bulk modulus of cubic BC 5 is smaller than those of diamond (446 GPa [20]) and cBN (377 GPa [21]), that is expected from a weaker bonding between B and C atoms in comparison to the C-C and B-N bondings.…”

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confidence: 99%

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Ultimate Metastable Solubility of Boron in Diamond: Synthesis of Superhard DiamondlikeBC5

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Ultimate Metastable Solubility of Boron in Diamond: Synthesis of Superhard DiamondlikeBC5

et al. 2009

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“…Control of the growth using chemical vapour deposition (CVD) on well-prepared diamond substrates is now excellent, and the quality of single crystals grown by this method is far superior to natural crystals or samples synthesized at high pressure and high temperature (HPHT). For example, the hole mobility of the best natural or HPHT samples is 2000 cm 2 V K1 s K1 , but in the CVD single crystals, this increases to 3800 cm 2 V K1 s K1 (Isberg et al 2002) and it is not clear whether this could be further improved.…”

Section: Introductionmentioning

confidence: 99%

Introduction. Carbon-based electronics: fundamentals and device applications

Nicholas

Mainwood

Eaves

2007

Phil. Trans. R. Soc. A.

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Carbon-based materials offer a number of exciting possibilities for both new science and applications. Many of these are based on the novel band structure of graphene, by which solids mimic the properties of relativisitic fermions and which offers the potential for high speed nanoscale electronics. When sheets of graphene are rolled up to make carbon nanotubes, further interesting properties are found; for example, both semiconducting and metallic nanotubes able to be produced. The novel properties of these new materials, together with the already remarkable properties of diamond itself, are discussed by a series of experts who came together in May 2007 to discuss and debate the potential for future development. Keywords: graphene; diamond; carbon nanotubesFor over 50 years, silicon has dominated the electronics industry, with progress inexorably following the prophetic statement from Gordon Moore, the co-founder of Intel, that the number of transistors on a silicon chip would grow exponentially with time, doubling every 2 years (Moore's law). This growth cannot be maintained forever and so the search is on to find and use new materials which may be able to produce higher performance and better functionality. A good candidate is carbon, which comes in a variety of fascinating forms with dramatic physical and electronic properties. Whereas the physical properties of graphite and diamond have been investigated for many years, the potential for electronic applications of other allotropes of carbon has only been appreciated relatively recently. Since the pioneering work of Iijima (1991) on single-wall carbon nanotubes (CNTs), there has been rapid progress in our understanding of their remarkable properties. The recent discovery of graphene, a single atomic monolayer of carbon, and its fabrication into a field-effect transistor in 2004 by Geim and colleagues in Manchester (Novoselov et al. 2004), has opened up a new field of fundamental physics and offers exciting prospects for new electronic devices. This discussion meeting examines some of the latest developments in the science and technology of CNTs and graphene. There are also four papers in this issue on diamond, which has much to offer as an electronic material. Graphene consists of a single sheet of carbon atoms bonded in the sp 2 configuration of a hexagonal lattice structure. This was studied theoretically 60 years ago by Wallace (1947) as the first approximation to understand the electronic properties of graphite. His work showed that graphene has a unique band structure in which the conduction and valence bands just touch each other, forming an exactly zero-band gap semiconductor (also known as a semi-metal). The energy dispersion relation of the two bands is therefore linear in wave vector, k, and they cross at the K points of the two-dimensional Brillouin zone. This property, in combination with the hexagonal crystal lattice symmetry, makes the electrons behave as if they were massless fermions, governed by Dirac's equation, with a relativistic limiting ...

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“…To create electron-hole pairs to initiate TOF measurements, a pulsed electron beam [3,4], soft x-rays [5], or a UV laser [6,7,8] whose energy were greater than 5.49 eV were used as injection quanta. For self-standing diamond crystals, a TOF measurement system that was consisted of a 213 nm UV pulsed laser, passive circuits and a digital oscilloscope was previously developed by the authors [9,10]; good linearity of output signals and fast response, i.e.…”

Section: Introductionmentioning

confidence: 99%

Development of a TOF measurement system of charge carrier dynamics in diamond thin films using a UV pulsed laser

Fujita¹,

Oshiki²,

Kaneko³

et al. 2006

Diamond and Related Materials

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Prime Novelty Statement:A fast TOF measurement system for transport behavior of free-charged carriers in intrinsic diamond films by using a UV pulsed laser was developed. The UV laser light narrowed to less than 80 μm widths could locally create hole-electron pairs in selected locations on a diamond film between two separated electrodes on the surface. This system made it possible to measure true behavior of charge carriers in the diamond films, because charge carriers run in diamond without disturbance caused by laser irradiation. In addition, the local irradiation system succeeded to reduce an influence of photoelectrons created at electrodes by laser irradiation. For one of diamond film used for confirmation of the TOF system, transit time of holes was measured as 4.7 ns with covering a distance of 250 μm. Authorship Statement:The submission of the manuscript has been approved by all co-authors. A fast TOF measurement system with 150 ps time resolution for transport behavior of free charge carriers in an intrinsic diamond film by using a UV pulsed laser was developed. The 213nm UV laser light narrowed to approximately 80 μm widths could locally create holeelectron pairs in selected locations on a diamond film between two parallel electrodes on the surface. This system measured accurate charge transport characteristics in a diamond film, because created charge carriers moved in a part of the diamond film where did not get any influence from the laser irradiation. Diamond samples used for verification of the TOF system were intrinsic CVD diamond films with thickness between 4 to 10 μm grown on HP/HT diamond substrates. Transit time of holes for one diamond film was 4.7 ns with a traverse distance of 250 μm. The local irradiation of laser made it possible to measure transport characteristics of electrons and holes separately. In addition, it substantially reduced influence of photoelectron, because laser beam did not irradiate electrodes. Through several examinations, excellent reliability of the TOF system was confirmed.

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High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

Cited by 1,161 publications

References 20 publications

Ultimate Metastable Solubility of Boron in Diamond: Synthesis of Superhard DiamondlikeBC5

Ultimate Metastable Solubility of Boron in Diamond: Synthesis of Superhard DiamondlikeBC5

Introduction. Carbon-based electronics: fundamentals and device applications

Development of a TOF measurement system of charge carrier dynamics in diamond thin films using a UV pulsed laser

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