2016
DOI: 10.1063/1.4971825
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High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization

Abstract: To realize the advanced thin-film transistors (TFTs), high-carrier-mobility semiconductor films on insulator structures should be fabricated with low-temperature processing conditions (≤500 °C). To achieve this, we investigated the solid-phase crystallization of amorphous-GeSn films on insulating substrates under a wide range of Sn concentrations (0%–20%), film thicknesses (30–500 nm), and annealing temperatures (380–500 °C). Our results reveal that a Sn concentration close to the solid solubility of Sn in Ge … Show more

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Cited by 46 publications
(64 citation statements)
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“…4(b), generally, the grain size of undoped Ge decreases with increasing t. This behavior was explained as the bulk nucleation occurring in thick films while interfacial nucleation remained predominant in thin films. 31,38 These results suggest that crystallization was completed before bulk nucleation started owing to the growth rate enhancement by Sb doping. The grain size for T g ¼ 375 C approaches twice that for T g ¼ 450 C and exceeds 15 lm, the largest grain size among SPC-Ge, in the whole t range.…”
mentioning
confidence: 86%
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“…4(b), generally, the grain size of undoped Ge decreases with increasing t. This behavior was explained as the bulk nucleation occurring in thick films while interfacial nucleation remained predominant in thin films. 31,38 These results suggest that crystallization was completed before bulk nucleation started owing to the growth rate enhancement by Sb doping. The grain size for T g ¼ 375 C approaches twice that for T g ¼ 450 C and exceeds 15 lm, the largest grain size among SPC-Ge, in the whole t range.…”
mentioning
confidence: 86%
“…A similar behavior has also been reported in Sndoped SPC-Ge. 38,39 Conversely, for C Sb ¼ 5.0 Â 10 20 cm À3 , both nucleation and lateral growth rates are lower than those of undoped Ge. Therefore, for C Sb ¼ 5.0 Â 10 20 cm À3 , the grain size enlargement [ Fig.…”
mentioning
confidence: 90%
“…The FWHM of Ge–Ge Raman peak of poly‐Ge 0.952 Sn 0.048 from a‐GeSn with an initial Sn content of 0.06 is narrowest, implying the highest crystallinity. In addition, the proper Sn fraction of 4.8% is supposed to improve the mobility without the consideration of severe alloy scattering as Sn fraction excess . Therefore, high‐crystallinity poly‐Ge 0.952 Sn 0.048 with an appropriate Sn fraction is suitable for the fabrication of high‐speed TFT.…”
Section: Comparison Of Poly‐gesn Tft Characteristics In This Work To mentioning
confidence: 99%
“…In addition, the proper Sn fraction of 4.8% is supposed to improve the mobility without the consideration of severe alloy scattering as Sn fraction excess. [27][28][29] Therefore, high-crystallinity poly-Ge 0.952 Sn 0.048 with an appropriate Sn fraction is suitable for the fabrication of high-speed TFT.…”
mentioning
confidence: 99%
“…High carrier mobility can contribute to improving the speed of the field effect transistors. The Optical and electronic properties of semiconductor alloys are related to the structure of the films, including the degree of strain, surface roughness, dislocation density, etc [5][6][7][8]. Effects of the structure on optoelectronic properties for GeSn films are still elusive.…”
Section: Introductionmentioning
confidence: 99%