Solar Cells and Their Applications 2010
DOI: 10.1002/9780470636886.ch13
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High‐Concentration, III–V Multijunction Solar Cells

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Cited by 13 publications
(7 citation statements)
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“…Literature based data from Kinsey andEdmondson (2009) andSegev et al (2012) are used in the EM. The CR discussed in this section is for 500Â unless otherwise stated.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Literature based data from Kinsey andEdmondson (2009) andSegev et al (2012) are used in the EM. The CR discussed in this section is for 500Â unless otherwise stated.…”
Section: Resultsmentioning
confidence: 99%
“…MJ solar cells are usually characterised in laboratory facilities under Concentrator Standard Test Conditions (CSTC). These conditions correspond to cell temperature T c = 25°C, air mass 1.5 direct (AM1.5D) and Direct Normal Irradiance DNI = 1 kW/m 2 , although in the field, the atmospheric conditions can vary significantly (Kinsey, 2010). Due to the fact that the subcells of the 3J solar cell are monolithically connected and also because of their sensitivity to the spectral variations and intensity of sunlight, the prediction of the electrical and thermal behaviour is still challenging .…”
Section: Introductionmentioning
confidence: 98%
“…Field data from these installations, including meteorological data such as DNI, air turbidity, and spectral irradiance, have been used to inform ongoing system optimization. A performance model has been developed that predicts system output based on the spectral response of the III–V multijunction cell corrected for temperature, air turbidity, spectral irradiance, transmission losses, soiling, and various module‐ and system‐level interconnection losses 1. Spectral irradiance for target locations was generated using the NREL SMARTS model 2.…”
Section: Results and Analysismentioning
confidence: 99%
“…Si 1−x Ge x in microelectronics [1,2], Ga 1−x In x N for blue light-emitting diodes [3], or Cd 1−x Zn x Te for radiation detectors [4]. In photovoltaics, the solar cells with the highest conversion efficiencies above 40 % are multijunction devices with many layers of carefully engineered III-V alloys grown on a Ge substrate [5]. Whereas isovalent alloying typically employs compositions from a few per cent up to equal amounts of the constituents, so to modify the bandstructure and optical properties, non-isovalent impurity doping [6] is used to tailor the electrical properties via more dilute substitutions ranging from parts per million (∼10 16 cm −3 ) up to few per cent in transparent conducting oxides [7].…”
Section: Introductionmentioning
confidence: 99%