2023
DOI: 10.1002/aelm.202200980
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High‐Conductivity Stoichiometric Titanium Nitride for Bioelectronics

Abstract: Bioelectronic devices such as neural stimulation and recording devices require stable low‐impedance electrode interfaces. Various forms of nitridated titanium are used in biointerface applications due to robustness and biological inertness. In this work, stoichiometric TiN thin films are fabricated using a dual Kaufman ion‐beam source setup, without the necessity of substrate heating. These layers are remarkable compared to established forms of TiN due to high degree of crystallinity and excellent electrical c… Show more

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Cited by 7 publications
(9 citation statements)
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References 27 publications
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“…Before deposition of the electrode material, the substrates were O 2 plasma activated. W was deposited by magnetron sputtering (100 nm, Bestec GmbH), Pt and TiN by ion beam sputtering (100 nm with 5 nm Ti sticking layer, Bestec GmbH) [55], IrO x and PtO x by reactive magnetron sputtering (240 nm, [56]). The sacrificial parylene-C was carefully peeled off under DI.…”
Section: Fabrication Of Electrode Arraysmentioning
confidence: 99%
“…Before deposition of the electrode material, the substrates were O 2 plasma activated. W was deposited by magnetron sputtering (100 nm, Bestec GmbH), Pt and TiN by ion beam sputtering (100 nm with 5 nm Ti sticking layer, Bestec GmbH) [55], IrO x and PtO x by reactive magnetron sputtering (240 nm, [56]). The sacrificial parylene-C was carefully peeled off under DI.…”
Section: Fabrication Of Electrode Arraysmentioning
confidence: 99%
“…Reproduced according to the terms of the CC BY license. [ 71 ] Copyright 2023, the authors, published by Wiley VCH.…”
Section: Bioelectronic Materialsmentioning
confidence: 99%
“…A combination of AlN with Parylene‐C are a promising encapsulation for long‐term measurement of MEAs. [ 71 ] AlN remains underexplored in the field of bioelectronics.…”
Section: Bioelectronic Materialsmentioning
confidence: 99%
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“…TiN is a commonly used industrial electrode that is compatible with silicon substrates. [20][21][22] It has high melting point, high hardness, and good conductivity. [23,24] However, its light reflection performance is poor, and the OLED fabricated using TiN has low brightness and low efficiency.…”
Section: Introductionmentioning
confidence: 99%