High confinement, high yield Si_3N_4 waveguides for nonlinear optical applications

Epping, Jörn P.; Hoekman, Marcel; Mateman, Richard; Leinse, Arne; Heideman, René; Rees, Albert van; Slot, Petrus J.M. van der; Lee, Chris; Boller, Klaus-J.

doi:10.1364/oe.23.000642

Cited by 78 publications

(61 citation statements)

References 18 publications

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“…For maximizing the waveguide-internal intensity via a strong confinement, enlarged core cross-sections are considered with a height and width around 1 µm. The two-dimensional step-index profile used for the calculations is based on the actual waveguide shape available from SEM images [13], which has slightly rounded edges at the bottom. Eigenmode calculations have shown that these rounded edges do not affect the polarization of the eigenmodes.…”

Section: Experimental Procedures and Resultsmentioning

confidence: 99%

“…This platform offers a unique combination of adjustable properties, i.e., record-low propagation loss (<0.001 dB/cm) [5] such as for high-Q resonators [11], a wide spectral range of optical transparency (from about 310 nm throughout the entire visible spectrum up to 5.5 µm [12]), and a high index contrast to achieve tight mode confinement. The latter is achieved with extremely thick waveguide cores, fabricated with a novel approach of stepwise filling of pre-etched grooves [13]. This platform has also reached a considerable degree of maturity, allowing two-dimensional tapering [14] for low-loss fiber coupling or realizing hybrid lasers [15,16].…”

Section: Introductionmentioning

confidence: 99%

“…This platform has also reached a considerable degree of maturity, allowing two-dimensional tapering [14] for low-loss fiber coupling or realizing hybrid lasers [15,16]. The platform supports also a wide range of optical functionalities [11,17] by offering various different core cross sections for waveguide dispersion engineering, and offers a highly reproducible material dispersion [13,14]. Regarding third-order nonlinearities, the recent demonstration of the broadestever optical spectrum generated on a chip, 495 THz when pumped at 1064 nm [18], shifted more towards the mid-infrared when pumped at 1550 nm, while still maintaining a bandwidth of 453 THz [19].…”

Section: Introductionmentioning

confidence: 99%

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Photo-induced second-order nonlinearity in stoichiometric silicon nitride waveguides

et al. 2017

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Abstract:We report the observation of second-harmonic generation (SHG) in stoichiometric silicon nitride waveguides grown via low-pressure chemical vapor deposition (LPCVD). Quasirectangular waveguides with a large cross section were used, with a height of 1 µm and various different widths, from 0.6 to 1.2 µm, and with various lengths from 22 to 74 mm. Using a mode-locked laser delivering 6-ps pulses at 1064 nm wavelength with a repetition rate of 20 MHz, 15% of the incoming power was coupled through the waveguide, making maximum average powers of up to 15 mW available in the waveguide depending on the waveguide cross section. Second-harmonic output was observed with a delay of minutes to several hours after the initial turn-on of pump radiation, showing a fast growth rate between 10 −4 to 10 −2 s −1 , with the shortest delay and highest growth rate at the highest input power. After this first, initial build-up (observed delay and growth), the second-harmonic became generated instantly with each new turn-on of the pump laser power. Phase matching was found to be present independent of the used waveguide width, although the latter changes the fundamental and second-harmonic phase velocities. We address the presence of a second-order nonlinearity and phase matching, involving an initial, power-dependent build-up, to the coherent photogalvanic effect. The effect, via the third-order nonlinearity and multiphoton absorption leads to a spatially patterned charge separation, which generates a spatially periodic, semi-permanent, DC-field-induced second-order susceptibility with a period that is appropriate for quasi-phase matching. The maximum measured second-harmonic conversion efficiency amounts to 0.4% in a waveguide with 0.9 × 1 µm 2 cross section and 36 mm length, corresponding to 53 µW at 532 nm with 13 mW of IR input coupled into the waveguide. The maximum equivalent χ (2) -susceptibility amounts to 3.7 pm/V, as retrieved from the measured conversion efficiency.

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Section: Experimental Procedures and Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Photo-induced second-order nonlinearity in stoichiometric silicon nitride waveguides

et al. 2017

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“…In this geometry, core widths of 0.8-1.0 μm and thicknesses varying from 0.8 to 1.2 μm were realized [53]. The waveguide channel is multimodal; up to three modes exist.…”

Section: Triplex Technology and Designmentioning

confidence: 99%

TriPleX: a versatile dielectric photonic platform

Wörhoff

Heideman

Leinse

et al. 2015

Advanced Optical Technologies

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229

175

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Photonic applications based on planar waveguide technology impose stringent requirements on properties such as optical propagation losses, light coupling to optical fibers, integration density, as well as on reliability and reproducibility. The latter is correlated to a high level of control of the refractive index and waveguide geometry. In this paper, we review a versatile dielectric waveguide platform, called TriPleX, which is based on alternating silicon nitride and silicon dioxide films. Fabrication with CMOS-compatible equipment based on low-pressure chemical vapor deposition enables the realization of stable material compositions being a prerequisite to the control of waveguide properties and modal shape. The transparency window of both materials allows for the realization of low-loss waveguides over a wide wavelength range (400 nm-2.35 μm). Propagation losses as low as 5 × 10 -4 dB/cm are reported. Three basic geometries (box shell, double stripe, and filled box) can be distinguished. A specific tapering technology is developed for on-chip, low-loss ( < 0.1 dB) spotsize convertors, allowing for combining efficient fiber to chip coupling with high-contrast waveguides required for increased functional complexity as well as for hybrid integration with other photonic platforms such as InP and SOI. The functionality of the TriPleX platform is captured by verified basic building blocks. The corresponding library and associated design kit is available for multi-project wafer (MPW) runs. Several applications of this platform technology in communications, biomedicine, sensing, as well as a few special fields of photonics are treated in more detail.

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“…Although our demonstration did not integrate the nonlinear waveguide for photon pair generation on the same chip, recent progress has shown that it is possible to use Si3N4 nonlinear devices for photon pair generation [15], and such nonlinear devices can be made using the TriPlex technology [16]. In addition, a Si3N4 platform compatible with our circuit exhibits fast stressoptic effect at >1 MHz [17], indicating the potential of our circuit operating at much higher speed in the future for quantum information processing.…”

mentioning

confidence: 98%

Compact and reconfigurable silicon nitride time-bin entanglement circuit

Xiong¹,

Zhang²,

Mahendra³

et al. 2015

Optica

100

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Photonic chip based time-bin entanglement has attracted significant attention because of its potential for quantum communication and computation. Useful time-bin entanglement systems must be able to generate, manipulate and analyze entangled photons on a photonic chip for stable, scalable and reconfigurable operation. Here we report the first time-bin entanglement photonic chip that integrates time-bin generation, wavelength demultiplexing and entanglement analysis. A two-photon interference fringe with an 88.4% visibility is measured (without subtracting any noise), indicating the high performance of the chip. Our approach, based on a silicon nitride photonic circuit, which combines the low-loss characteristic of silica and tight integration features of silicon, paves the way for scalable real-world quantum information processors.Entanglement is at the heart of photonic quantum technologies such as secure communication [1], super-resolution metrology [2], and powerful computation [3]. Photons are usually entangled in one of three degrees of freedom: polarization, optical path, or time bin. On-chip polarization entangled photon sources have been reported [4,5], but only the components for photon generation were on-chip due to the difficulty of integrating polarization analysis devices. Chip-scale optical path entangled photon generation and analysis [6], and teleportation [7] have seen rapid development, aiming for on-chip quantum computation. Time-bin entanglement is of particular interest because it (i) can be extended to higher dimensions for computation [8]; (ii) is insensitive to polarization fluctuation and polarization dispersion, and therefore very promising for long distance quantum key distribution (QKD) [1]; and (iii) is naturally compatible with integrated optics: photons can be generated in nonlinear waveguides, entangled and analyzed using on-chip unbalanced Mach-Zehnder interferometers (UMZIs) [9,10].For time-bin entanglement to be useful in the real world, the onchip integration of the entire entanglement system is essential. The high performance of the entanglement system not only relies on photon generation, but also hinges on the compactness, scalability and reconfigurability of the photonic circuit that generates the time bins, demultiplex the photons and analyze the entanglement. Refs [9] and [10] reported photon generation from compact silicon devices, but the wavelength demultiplexing was off chip, and entanglement analysis was based on silica waveguides, which have large bending radii due to their low index contrast. These features are incompatible with high density integration.In this paper we report, for the first time, a time-bin entanglement photonic chip that integrates time-bin generation, wavelength demultiplexing and entanglement analysis. Our demonstration was based on a high index contrast silicon nitride (Si3N4) circuit. The waveguide bending radii were reduced from millimeter (for silica) to micrometer scale while maintaining low losses, making high density integration possibl...

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High confinement, high yield Si_3N_4 waveguides for nonlinear optical applications

Cited by 78 publications

References 18 publications

Photo-induced second-order nonlinearity in stoichiometric silicon nitride waveguides

Photo-induced second-order nonlinearity in stoichiometric silicon nitride waveguides

TriPleX: a versatile dielectric photonic platform

Compact and reconfigurable silicon nitride time-bin entanglement circuit

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