2007
DOI: 10.1002/jrs.1698
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High contrast scanning nano‐Raman spectroscopy of silicon

Abstract: We have demonstrated that scanning nano-Raman spectroscopy (SNRS), generally known as tip-enhanced Raman spectroscopy (TERS), with side illumination optics can be effectively used for analysis of siliconbased structures at the nanoscale. Even though the side illumination optics has disadvantages such as difficulties in optical alignment and shadowing by the tip, it has the critical advantage that it may be used for the analysis of nontransparent samples. A key criterion for making SNRS effective for imaging Si… Show more

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Cited by 104 publications
(99 citation statements)
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“…It may be used in inspections for stress distribution and fission process in nanometer scale (Zhu et al, 2007a(Zhu et al, , 2007bGeorgi et al, 2007). The polarization control techniques may be used to reduce the far-field background to improve the contrast (Lee et al, 2007).…”
Section: Discussionmentioning
confidence: 99%
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“…It may be used in inspections for stress distribution and fission process in nanometer scale (Zhu et al, 2007a(Zhu et al, , 2007bGeorgi et al, 2007). The polarization control techniques may be used to reduce the far-field background to improve the contrast (Lee et al, 2007).…”
Section: Discussionmentioning
confidence: 99%
“…Another issue concerning AFM-TERS tips is that the Raman signal of the inner material of the TERS tips (Si or Si3N4) is also being enhanced and exists as the noise. Especially in the research on semi-conductor materials, this issue should be pay closer attention to (Lee et al, 2007). The preparation of STM-TERS tips is comparatively mature.…”
Section: Fabrication Of Ters Tipsmentioning
confidence: 99%
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“…Note that the investigated sample and the intermediate phases presented above 26 are completely opposite among nanostructured materials: here, nonstoichiometry introduces nanodisordering in a reference crystal, whereas intermediate phases reflect a nanostructuring of amorphous systems. 42 report on the TERS of strained silicon (the same topic as in the review by Hayazawa et al 21 ). Raman mapping at high resolution (¾20 nm) was achieved thanks to a careful optimization of the beam polarization (to get the best near-field to far-field contrast possible).…”
Section: Carbon Nanotubesmentioning
confidence: 99%