2021
DOI: 10.1016/j.physb.2021.413339
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High conversion and quantum efficiency indium-rich p-InGaN/p-InGaN/n-InGaN solar cell

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Cited by 16 publications
(5 citation statements)
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“…In this study, the InGaN‐based solar cell is composed of a three‐layered PPN InGaN structure as depicted in Figure 3 [48]. The uppermost layer comprises p‐In0.01GaN0.99 with a thickness of 0.1 μm, while the middle and bottom layers consist of p‐In0.5GaN0.5 and n‐In0.01GaN0.99 layers, each with a thickness of 1.0 μm.…”
Section: Ingan‐based Solar Cellmentioning
confidence: 99%
“…In this study, the InGaN‐based solar cell is composed of a three‐layered PPN InGaN structure as depicted in Figure 3 [48]. The uppermost layer comprises p‐In0.01GaN0.99 with a thickness of 0.1 μm, while the middle and bottom layers consist of p‐In0.5GaN0.5 and n‐In0.01GaN0.99 layers, each with a thickness of 1.0 μm.…”
Section: Ingan‐based Solar Cellmentioning
confidence: 99%
“…The dielectric permittivity (𝜀) and the electron affinity (𝜒) of InxGa1-xN can be expressed using Eqs. ( 3) and ( 4), respectively [28]:…”
Section: Theoretical Modeling and Simulationmentioning
confidence: 99%
“…In this work, the InGaN-based solar cell consists of a three-layered PPN InGaN structure [41]. The top layer is p-In0.01GaN0.99 with a thickness of 0.1 µm, while the middle and bottom layers are made of 1.0 µmthick p-In0.5GaN0.5 and n-In0.01GaN0.99 layers, respectively, as shown in Fig.…”
Section: Ingan-based Solar Cellmentioning
confidence: 99%