Advances in Cryogenic Engineering Materials 1998
DOI: 10.1007/978-1-4757-9056-6_125
|View full text |Cite
|
Sign up to set email alerts
|

High Critical Current Densities in Nb3Sn Films with Engineered Microstructures — Artificial Pinning Microstructures

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
12
0

Year Published

2000
2000
2017
2017

Publication Types

Select...
6
2

Relationship

0
8

Authors

Journals

citations
Cited by 14 publications
(12 citation statements)
references
References 3 publications
0
12
0
Order By: Relevance
“…The key origin of this performance limitation is intrinsic and determined by the upper critical field ( B c2 ) of Nb 3 Sn of 30 T [7]. The high-field critical current-density of Nb 3 Sn wires can in principle be improved significantly by reducing the grain-size to around 10 to 20 nm and thereby improving the high-field pinning efficiency [8, 9], and this potential can be estimated (figure 1). Such fine-grain wires are presently not commercially available, although promising results have been demonstrated [10].…”
Section: Introductionmentioning
confidence: 99%
“…The key origin of this performance limitation is intrinsic and determined by the upper critical field ( B c2 ) of Nb 3 Sn of 30 T [7]. The high-field critical current-density of Nb 3 Sn wires can in principle be improved significantly by reducing the grain-size to around 10 to 20 nm and thereby improving the high-field pinning efficiency [8, 9], and this potential can be estimated (figure 1). Such fine-grain wires are presently not commercially available, although promising results have been demonstrated [10].…”
Section: Introductionmentioning
confidence: 99%
“…In figure 3.6, it is illustrated that in NbTi the pinning force peaks at a higher reduced magnetic field, which is desirable for high field applications. It was previously demonstrated that pinning in Nb 3 Sn can be improved substantially through ternary additions in thin films by Dietderich et al [116] and Godeke et al [115], which could lead to a future method for improving the pinning properties of Nb 3 Sn wires.…”
Section: Differences Between J C Parameterizations Of Nb-ti and Nb 3 Snmentioning
confidence: 99%
“…The highest current densities achieved at 12T were 3200 amp/mm 2 in the layer. Work by Dietderich et al 15 gave a lower limit on current density in the layer of 7000 amps/mm 2 at 12T. This assumed that all the niobium was reacted hence a lower bound.…”
Section: Current Densitymentioning
confidence: 99%