High crystalline aluminum nitride via highly enhanced adatom diffusion driven by point defect complex

Lee, Moonsang; Yang, Mikyung; Lee, Haeyong; Lee, Hyun Uk; Kim, Heejin

doi:10.1016/j.apsusc.2019.144615

Cited by 7 publications

(4 citation statements)

References 36 publications

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“…Since oxygens usually incorporate into AlN as O N + point defects, the repulsive force between O N and Al adatoms can increase the diffusion length of Al adatoms. 41 When sputtered with mixed gas, Al adatoms are more likely to reach energy favorable nucleation sites, thereby improving the crystal quality and the structural anisotropy. Some reports also demonstrated that the incorporation of oxygen could improve the crystal quality and the reproducibility of the AlN film and the subsequent epilayers grown by HVPE or MOCVD.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…Some reports also demonstrated that the incorporation of oxygen could improve the crystal quality and the reproducibility of the AlN film and the subsequent epilayers grown by HVPE or MOCVD. 41,42 After HTA, the crystalline qualities of AlN films are dramatically improved due to the solid-phase reaction. 20 The differences of XRC FWHMs measured along a-and mdirections are within 30 arcsec (not shown here), reflecting the on-chip inhomogeneity and/or the measuring error.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…It suggests that the introduction of O 2 helps exhibit better c -axis orientation and alleviate the anisotropy. Since oxygens usually incorporate into AlN as O N + point defects, the repulsive force between O N and Al adatoms can increase the diffusion length of Al adatoms . When sputtered with mixed gas, Al adatoms are more likely to reach energy favorable nucleation sites, thereby improving the crystal quality and the structural anisotropy.…”

Section: Resultsmentioning

confidence: 99%

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Unexpected Realization of N-Polar AlN Films on Si-Face 4H–SiC Substrates Using RF Sputtering and High-Temperature Annealing

Zhang

Guo

Cai

et al. 2023

Crystal Growth & Design

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In this study, we demonstrated AlN films with unexpected N-polarity on Si-face 4H−SiC substrates using RF reactive magnetron sputtering and post high-temperature annealing (HTA). It is found that HTA-AlN sputtered with pure nitrogen or mixed gases of nitrogen and trace oxygen exhibits undoubtable N polarity, which appears to contradict the common assumption of Al-polar AlN on Si-face SiC. The interfacial studies of HTA-AlN sputtered with pure N 2 reveal that the naturally oxidized SiC surface induces the formation of Si−O�Al−N bonds rather than conventional Si�N−Al bonds, thereby causing N-polar AlN. Sputtering with the mixed gases results in 5 nm thick complex transition layers at the AlN/SiC interface, including two types of oxygen-participated energy-unstable inversion domain boundaries and multiple polarity inverted AlN layers. Compared to that sputtered with the mixed gases, the N-polar HTA-AlN film sputtered with pure nitrogen presents a smoother surface morphology for the absence of AlON islands and lower threading dislocation density due to closer X-ray rocking curve full widths at half-maximum for (0002) and (101̅ 2) reflections. This work proves a new approach to prepare high-quality N-polar AlN/SiC templates for Al-rich AlGaN-based N-polar optoelectronic and power devices.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Unexpected Realization of N-Polar AlN Films on Si-Face 4H–SiC Substrates Using RF Sputtering and High-Temperature Annealing

Zhang

Guo

Cai

et al. 2023

Crystal Growth & Design

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“…In addition, the formation energy (E f ) of defects can be calculated which paves the way for defect engineering in materials [25]. Numerous works have been carried out to study the defects, particularly vacancies, in different ceramics deposited by magnetron sputtering [26,27]. Abadias et al [16] thoroughly investigated the effect of vacancies on elastic constants of epitaxial TaN, showing that up to 11% of vacancies can be present in the deposited TaN.…”

Section: Introductionmentioning

confidence: 99%

Vacancies and substitutional defects in multicomponent diboride Ti_0.25Zr_0.25Hf_0.25Ta_0.25B₂: first-principle study

Matas¹,

Farhadizadeh²,

Houška³

2021

J. Phys.: Condens. Matter

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We study the hard and electrically conductive multicomponent diboride Ti0.25Zr0.25Hf0.25Ta0.25B2 with high thermal stability by ab initio calculations. We focus on the effect of defects (either vacancies or C atoms, both relevant for numerous experiments including our own) on material characteristics. Different types, concentrations and distributions of defects were investigated, and the configurations leading to the lowest formation energies were identified. We show that the replacement of B by C is more unfavorable than the formation of B vacancies. We show that vacancies prefer to coalesce into a larger planar void, minimizing the number of broken B B bonds and the volume per atom, while carbon substitutions at boron sites do not prefer coalescence and tend to minimize the number of C-C bonds. We show the effect of vacancies on mechanical and electronic properties, and use the results to explain experimental data.

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Effect of oxygen on defect states of Al0.4Ga0.6N layers grown by hydride vapor phase epitaxy

Ahn

Kim

2022

Journal of Materials Research and Technology

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High crystalline aluminum nitride via highly enhanced adatom diffusion driven by point defect complex

Cited by 7 publications

References 36 publications

Unexpected Realization of N-Polar AlN Films on Si-Face 4H–SiC Substrates Using RF Sputtering and High-Temperature Annealing

Unexpected Realization of N-Polar AlN Films on Si-Face 4H–SiC Substrates Using RF Sputtering and High-Temperature Annealing

Vacancies and substitutional defects in multicomponent diboride Ti_0.25Zr_0.25Hf_0.25Ta_0.25B₂: first-principle study

Effect of oxygen on defect states of Al0.4Ga0.6N layers grown by hydride vapor phase epitaxy

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High crystalline aluminum nitride via highly enhanced adatom diffusion driven by point defect complex

Cited by 7 publications

References 36 publications

Unexpected Realization of N-Polar AlN Films on Si-Face 4H–SiC Substrates Using RF Sputtering and High-Temperature Annealing

Unexpected Realization of N-Polar AlN Films on Si-Face 4H–SiC Substrates Using RF Sputtering and High-Temperature Annealing

Vacancies and substitutional defects in multicomponent diboride Ti0.25Zr0.25Hf0.25Ta0.25B2: first-principle study

Effect of oxygen on defect states of Al0.4Ga0.6N layers grown by hydride vapor phase epitaxy

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Vacancies and substitutional defects in multicomponent diboride Ti_0.25Zr_0.25Hf_0.25Ta_0.25B₂: first-principle study