High Cubic-Phase Purity InN on MgO (001) Using Cubic-Phase GaN as a Buffer Layer

Sanorpim, Sakuntam; Kuntharin, S.; Parinyataramas, Jamreonta; Yaguchi, Hiroyuki; Iwahashi, Yohei; Orihara, M.; Hijikata, Yasuto; Yoshida, Seikoh; Ihm, Jisoon; Cheong, Hyeonsik

doi:10.1063/1.3666291

Cited by 4 publications

(3 citation statements)

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“…2 Zincblende (zb-) III-nitrides offer a solution to overcome these challenges as they are free of both spontaneous and piezoelectric polarization (in the ⟨001⟩ growth direction) thanks to the centrosymmetric crystal structure while having similar benefits. zb-III-nitrides are realized traditionally via (i) direct deposition on zb substrates (e.g., GaAs, 5 3C−SiC, 6 Si(100), 7 and MgO 8 ) and (ii) transforming the wz-phase into a zb-one (ii.a) by impurity incorporation (such as Ga 8 ) 9 or (ii.b) by growth on V-10−12 or U-grooved 13−15 patterned silicon substrates. Benefiting from this emerging material system is only possible through theoretically investigating the electronic properties.…”

Section: Introductionmentioning

confidence: 99%

“…zb- III-nitrides are realized traditionally via (i) direct deposition on zb substrates (e.g., GaAs, 3C–SiC, Si(100), and MgO) and (ii) transforming the wz- phase into a zb- one (ii.a) by impurity incorporation (such as Ga) or (ii.b) by growth on V - − or U -grooved − patterned silicon substrates. Benefiting from this emerging material system is only possible through theoretically investigating the electronic properties.…”

Section: Introductionmentioning

confidence: 99%

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Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory

Tsai

Bayram

2020

ACS Omega

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Band gaps and electron affinities of binary and ternary, wurtzite (wz-) and zincblende (zb-) III-nitrides are investigated using a unified hybrid density functional theory, and band offsets between wz- and zb- alloys are calculated using Anderson’s electron affinity model. A conduction (and valence) band offset of 1.85 (0.89) eV has been calculated for zb-GaN/InN heterojunctions, which is 0.25 eV larger (and 0.26 eV smaller) than that of the wz- counterpart. Such polarization-free zb-GaN/InGaN/GaN quantum well structures with large conduction band offsets have the potential to suppress electron leakage current and quantum-confined Stark effects (QCSEs). Contrarily, the conduction (and valence) band offset of zb-AlN/GaN heterojunctions is calculated to be 1.32 (0.43) eV, which is 1.15 eV smaller (and 0.13 eV larger) than that of the wz- case. The significant reduction in zb-AlN/GaN band offsets is ascribed to the smaller and indirect band gap of zb-AlNthe direct-to-indirect crossover point in zb-Al X Ga1–X N is when X ∼ 65%. The small band gap of the zb-AlN barrier and the small conduction band offsets imply that electrons can be injected into zb-AlN/GaN/AlN quantum well heterostructures with small bias and less energy loss when captured by the quantum wells, respectively, i.e., loss as heat is reduced. The band gap of ternary III-nitrides does not linearly depend on alloy compositions, implying a nonlinear dependence of band offsets on compositions. As a result, the large bowing of the conduction band offset is identified and ascribed to the cation-like behavior of the conduction band minimum, while the linear dependence of the valence band offset on compositions is attributed to the anion-like character of the valence band maximum.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory

Tsai

Bayram

2020

ACS Omega

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“…Initially, hexagonal phase inclusion in both c-InN layer and c-GaN buffer layer was examined by ω-scan in X-ray reciprocal space lattice mapping (RSM) [10]. Moreover, micro Raman scattering measurement was performed for c-InN films at room temperature to evaluate the crystal quality of c-InN film as reported in previous work [11]. Bright field (BF) and dark field (DF) cross-sectional TEM images taken along the [110] zone axis were used to analyze a generation of hexagonal phase in c-InN grown layer as well as hexagonal phase in c-GaN nucleation layer.…”

Section: Methodsmentioning

confidence: 99%