High‐Current‐Density Vertical‐Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures

Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Horng Long; Shakir, Muhammad Zeeshan; Huang, Yu; Duan, Xiangfeng

doi:10.1002/adma.201506173

Cited by 44 publications

(31 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The vertical architecture of FGOTM enabled ultrashort channel length (nanometer scale) and also allowed current flow vertically across the semiconductor layer from bottom source to top drain electrode. The ultrashort channel length is simply determined by the thickness of semiconductor layer (tens of nanometers), resulting in fast operation speed and high current density greater than 2.5 mA cm −2 , which is much greater than that of conventional planar FGOTM . Moreover, the vertical FGOTM (VFGOTM) devices exhibited outstanding memory performance along with excellent mechanical stability.…”

Section: Introductionmentioning

confidence: 99%

High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor

Wang

Chen

et al. 2017

Adv Funct Materials

110

View full text Add to dashboard Cite

Flexible floating-gate organic transistor memory (FGOTM) is a potential candidate for emerging memory technologies. Unfortunately, conventional planar FGOTM suffers from weak driving ability and insufficient mechanical flexibility, which limits its commercial application. In this work, a novel flexible vertical FGOTM (VFGOTM) is reported. Benefitting from new vertical architecture, VFGOTM provides ultrashort channel length to afford an extremely high current density. Meanwhile, VFGOTM devices exhibit excellent memory performance and outstanding retention property. The memory properties of VFGOTM devices are comparable or even better than traditional planar FGOTM and much better than the reported organic nonvolatile memory with vertical transistor structures. More importantly, organic nonvolatile memory with vertical transistor structures is investigated for the first time on a flexible substrate. The results show that VFGOTM architecture allows vertical current flow across the channel layer to effectively eliminate the effect of mechanical bending during current transport, which significantly improves the mechanical stability of the flexible VFGOTM. Hence, with a combination of excellent driving ability, memory performance, and mechanical stability, VFGOTM devices meet the practical requirements for high performance memory applications, which have great potential for the application in a wide range of flexible and wearable electronics.

show abstract

Section: Introductionmentioning

confidence: 99%

High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor

Wang

Chen

et al. 2017

Adv Funct Materials

110

View full text Add to dashboard Cite

show abstract

“…When the active material is sensitive to light, the devices become to field effect phototransistors (VFEpTs), which can be served as photodetectors. VFEpTs, often associated with short channel, have been studied increasingly and become a significant branch in photodetection, due to low‐voltage operation, integrated circuit architectural compatibility, and lateral detection . Till now, those photoactive materials are limited in organic molecules, i.e., pentacene, poly (2‐methoxy‐ 5‐(20‐ ethylhexyloxy‐ p ‐phenylenevinylene)), poly(3‐hexylthiophene) .…”

Section: Introductionmentioning

confidence: 99%

Short Channel Quantum Dot Vertical and Lateral Phototransistors

Zhang

Song

et al. 2016

Advanced Optical Materials

View full text Add to dashboard Cite

Quantum dot (QD) devices have been studied extensively as a significant platform for optoelectronic applications and photodetection, but the high efficient conversion from light to current requires high operating voltages, and has become a roadblock in a wide range of on chip applications. The main challenges rely on promoting light absorption and transportation efficiency, which occur in the same place—the channel. Here, the authors present short channel (SC) field effect phototransistors (FEpTs) by combing the QDs with the vertical architecture for the first time. These devices exhibit excellent performances in ultrahigh R of 1 × 105 A W−1, D* of 1.6 × 1013 Jones, effective quantum efficiency of 2.6 × 107% at low operating voltage of ±4 V under room temperature, and they strongly depend on channel length. It is found there was an optimal L to obtain high performances, due to the two roles of channel, light harvesting, and electric transportation, which give the negative and positive contributions to photocurrent, respectively. These SC QVFEpTs exhibit a great application in photodetection, from visible to infrared, moreover, the all‐solution fabricating process and lateral detection (determined by vertical architecture) provide a convenient pathway for low cost, integrated circuit architectural compatibility.

show abstract

“…Currently, great progress of growing large-area graphene has been witnessed, enabling its potential applications in next generation of electronic devices. When the graphene is in contact with organic or inorganic semiconductors such as silicon, [67,68] [72,73] indium gallium zinc oxide (IGZO), [30] COFs, [74] black phosphorous, [75] and MoTe 2 , [76] the gate field can greatly tune the Schottky barrier height between the grapheme and semiconductor materials, for high-performance devices. [66] In addition, the large-area and high quality as well as smooth surface of graphene make it beneficial to form good contact interface with other component parts in devices for high performances.…”

Section: Graphene Electrode-based Vofets (Ge-vofets)mentioning

confidence: 99%

Vertical Organic Field‐Effect Transistors

Liu

Qin

Gao

et al. 2019

Adv Funct Materials

View full text Add to dashboard Cite

Field-effect transistors are the fundamental building blocks for electronic circuits and processors. Compared with inorganic transistors, organic field-effect transistors (OFETs), featuring low cost, low weight, and easy fabrication, are attractive for large-area flexible electronic devices. At present, OFETs with planar structures are widely investigated device structures in organic electronics and optoelectronics; however, they face enormous challenges in realizing large current density, fast operation speed, and outstanding mechanical flexibility for advancing their potential commercialized applications. In this context, vertical organic field-effect transistors (VOFETs), composed of vertically stacked source/drain electrodes, could provide an effective approach for solving these questions due to their inherent small channel length and unique working principles. Since the first report of VOFETs in 2004, impressive progress has been witnessed in this field with the improvement of device performance. The aim of this review is to give a systematical summary of VOFETs with a special focus on device structure optimization for improved performance and potential applications demonstrated by VOFETs. An overview of the development of VOFETs along with current challenges and perspectives is also discussed. It is hoped that this review is timely and valuable for the next step in the rapid development of VOFETs and their related research fields.

show abstract

High‐Current‐Density Vertical‐Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures

Abstract: A/cm 2 , about two orders of magnitude higher than previous graphene/insulator/graphene tunneling transistor at the same on/off ratio.

Cited by 44 publications

References 36 publications

High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor

High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor

Short Channel Quantum Dot Vertical and Lateral Phototransistors

Vertical Organic Field‐Effect Transistors

Contact Info

Product

Resources

About