High-current measurement of the grain resistivity in zinc oxide varistor ceramics

Ivon, A.I.; Lavrov, R.I.; Glot, A.B.

doi:10.1016/j.ceramint.2013.01.072

Cited by 14 publications

(9 citation statements)

References 31 publications

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“…In [3], it was proposed to use single voltage pulses of exponential form for measuring the current-voltage characteristics. Such pulses allow deploy voltage in a certain range.…”

mentioning

confidence: 99%

Processing of the Digital Images of Analogous Oscillograms at Pulsed Measurements

Ivon¹,

Istushkin²,

Rybka³

et al. 2020

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A program for processing the digital images of analog oscillograms at pulsed measurements of the current-voltage characteristics of semiconductor materials and devices in the region of high electric currents is presented. The processing of digital images in this program bases on scanning of coordinates and allows measuring the instantaneous voltages and currents with a relative error of no more than 1%. The program is created using the languages HTML5, CSS3, JavaScript and Canvas technology. The software environment for program run is the Internet browser.

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“…In [3], it was proposed to use single voltage pulses of exponential form for measuring the current-voltage characteristics. Such pulses allow deploy voltage in a certain range.…”

mentioning

confidence: 99%

Processing of the Digital Images of Analogous Oscillograms at Pulsed Measurements

Ivon¹,

Istushkin²,

Rybka³

et al. 2020

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show abstract

“…When the variation rate of the donor concentration is much larger than that of the density of interface states, the barrier height is much more strongly affected by the donor concentration than by the density of the interface states [26]. Therefore, the decrease of the nonlinear coefficient with increasing amount of Zn can be attributed to the decrease of barrier height at the grain boundaries [27,28].…”

Section: Resultsmentioning

confidence: 99%

Effect of Zn doping on stability of ZnO varistors under high pulse-current stress

Jiang

Wang

Zhang

et al. 2015

Ceramics International

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“…As it can be seen, the effective linear resistance Rlin associated with the volume electrical conductivity of ceramics grains contributes to Rdif. As shown in [4,5], this makes it possible to use Rdif for determining the volume electrical resistivity lin of ZnO and SnO2 grains in varistor materials.…”

Section: Methodsmentioning

confidence: 99%

“…Such varistors material contains 97 mol.% ZnO and oxides Bi2O3, Sb2O3, Co3O4, Cr2O3, MnO2 as additions. Fabrication details of the samples with the small area of Ag electrodes (0.023 -0.030 cm 2 ) are described in [4]. The area of electrodes was measured with relative error ±2% using the raster image of varistor surface with electrodes [8].…”

Section: Methodsmentioning

confidence: 99%

Linear resistance limiting the current of intergranular barriers in varistor ceramics

Ivon

2023

J. Phys. Electron.

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Method for measuring the linear resistivity ρlin, which affects the volt-ampere characteristic (VAC) nonlinearity of varistor materials in a high current region is proposed. For ZnO based varistor ceramics the dependence of ρlin on amplitude density Jmax of current pulse is studied in the range 5 A cm-2 – 4600 A cm-2. At Jmax < 200 A cm-2 a sharp decrease of ρlin with increasing Jmax takes place. This behavior indicates a non-uniform distribution of high current over the cross section of ceramics sample. At Jmax > 1000 A cm-2 ρlin does not depend on Jmax and has a value of 0.49 – 0.50 Ohm cm corresponding to the volume resistivity ρg of ZnO grains. The decrease in nonlinearity of VAC at high currents is due to the formation of conductive paths of electric current between the electrodes of a sample. Along such paths, all intergranular double Schottky barriers are in a reversible electrical breakdown mode, probably due to impact ionization. The current in these paths is limited by small linear volume resistance of the grains. A spread of grain sizes is the reason for existence of current paths with different numbers of contacts between grains and therefore with different breakdown voltages. At voltage increases, the sequential formation of parallel-connected conductive paths occurs. This explains the inhomogeneous distribution of high current over the cross section of a sample at Jmax < 200 A cm-2. At Jmax > 1000 A cm-2 almost all current paths in a sample are switched on and the value of ρlin limiting the barriers current is close to the volume resistivity ρg of grains.

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High-current measurement of the grain resistivity in zinc oxide varistor ceramics

Cited by 14 publications

References 31 publications

Processing of the Digital Images of Analogous Oscillograms at Pulsed Measurements

Processing of the Digital Images of Analogous Oscillograms at Pulsed Measurements

Effect of Zn doping on stability of ZnO varistors under high pulse-current stress

Linear resistance limiting the current of intergranular barriers in varistor ceramics

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