High-Current Tunneling FETs With (110) Orientation and a Channel Heterojunction

Long, Pengyu; Huang, Jun; Povolotskyi, Michael; Klimeck, Gerhard; Rodwell, M.J.W.

doi:10.1109/led.2016.2523269

Cited by 23 publications

(20 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Heterojunction TFETs have been simulated by using the NEGF approach with both a TB [83,115,132,133], and a · k p Hamiltonian [62,124,126,131,134]. The use of the GaSb/InAs hetero-junction usually provides a larger I ON compared to InAs homojunction TFETs, but such a potential improvement is partly frustrated by quantum confinement effects that tend to turn the supposedly broken-bandgap GaSb/InAs hetero-junction into an actually staggered band alignment system, as illustrated in figure 15.…”

Section: Hetero-junction Modeling and Engineeringmentioning

confidence: 99%

A review of selected topics in physics based modeling for tunnel field-effect transistors

Esseni

Pala

Palestri

et al. 2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years, driven by the quest for a new electronic switch operating at a supply voltage well below 1 V and thus delivering substantial improvements in the energy efficiency of integrated circuits. This paper reviews several aspects related to physics based modeling in TFETs, and shows how the description of these transistors implies a remarkable innovation and poses new challenges compared to conventional MOSFETs. A hierarchy of numerical models exist for TFETs covering a wide range of predictive capabilities and computational complexities. We start by reviewing seminal contributions on direct and indirect band-to-band tunneling (BTBT) modeling in semiconductors, from which most TCAD models have been actually derived. Then we move to the features and limitations of TCAD models themselves and to the discussion of what we define non-self-consistent quantum models, where BTBT is computed with rigorous quantum-mechanical models starting from frozen potential profiles and closed-boundary Schrödinger equation problems. We will then address models that solve the open-boundary Schrödinger equation problem, based either on the non-equilibrium Green's function NEGF or on the quantum-transmitting-boundary formalism, and show how the computational burden of these models may vary in a wide range depending on the Hamiltonian employed in the calculations. A specific section is devoted to TFETs based on 2D crystals and van der Waals hetero-structures. The main goal of this paper is to provide the reader with an introduction to the most important physics based models for TFETs, and with a possible guidance to the wide and rapidly developing literature in this exciting research field.

show abstract

Section: Hetero-junction Modeling and Engineeringmentioning

confidence: 99%

A review of selected topics in physics based modeling for tunnel field-effect transistors

Esseni

Pala

Palestri

et al. 2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Similar to the locally strained nTFET cases, the source-to-channel tunnel probability increases while the source-to-drain leakage and ambipolar leakage are not infuenced. In addition, the sourceto-channel tunnel barrier thickness is further reduced by the valence band discontinuity (between strained and unstrained parts), similar to the channel heterojunction design [10]. For nTFETs, unfortunately, we could not employ the same design, i.e., extending the locally strained area into the channel and make use of the conduction band discontinuity.…”

Section: B P-type Tfetsmentioning

confidence: 99%

“…But its drive current (I ON ) is usually limited by the small tunnel probability [1] leading to pronounced switching delay (CV/I). Various methods have been proposed to improve I ON , such as the doping engineering [2], [3], different channel materials (including low band gap III-V materials and two-dimensional materials) [4], broken/staggered gap heterojunction [4], [5], grading of the source [6], resonant enhancement [7]- [9], and channel/source heterojunctions [10], [11].…”

Section: Introductionmentioning

confidence: 99%

“…UTB structures offer more design freedoms. For example, by selecting ( 110)/[110] instead of (001)/[100] as the confinement/transport orientation, the tunnel probability of GaSb/InAs heterojunction is increased due to the smaller band gap and transport effective masses [10]. Besides, the effect of strain is different if strain is applied in different directions [21].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

High-Performance Complementary III-V Tunnel FETs with Strain Engineering

Huang¹,

Wang²,

Long³

et al. 2016

Preprint

Self Cite

View full text Add to dashboard Cite

Strain engineering has recently been explored to improve tunnel field-effect transistors (TFETs). Here, we report design and performance of strained ultra-thin-body (UTB) III-V TFETs by quantum transport simulations. It is found that for an InAs UTB confined in [001] orientation, uniaxial compressive strain in [100] or [110] orientation shrinks the band gap meanwhile reduces (increases) transport (transverse) effective masses. Thus it improves the ON state current of both n-type and p-type UTB InAs TFETs without lowering the source density of states.Applying the strain locally in the source region makes further improvements by suppressing the OFF state leakage. For p-type TFETs, the locally strained area can be extended into the channel to form a quantum well, giving rise to even larger ON state current that is comparable to the n-type ones. Therefore strain engineering is a promising option for improving complementary circuits based on UTB III-V TFETs.

show abstract

“…3 Numerous strategies have been adopted so far in terms of device geometry and materials in order to address the problem in these tunneling transistors. Of them, double gate (DG) TFETs, 4 heterojunction (HJ) TFETs, [5][6][7][8][9][10] cylindrical TFETs, 11 dual metal gate TFETs, 12 Carbon Nanotube (CNT) TFETs, 13 III-V TFETs, 14 and gate engineered TFETs 15 are the most significant.…”

Section: Introductionmentioning

confidence: 99%

A temperature‐dependent surface potential‐based algorithm for extraction of threshold voltage in homojunction TFETs

Goswami

Bhowmick²

2017

Int J Numerical Modelling

View full text Add to dashboard Cite

In this paper, we propose an algorithm to extract threshold voltage in homojunction tunnel field effect transistors (TFETs). Single gate TFET and double gate TFET are the geometries which are considered for verification of the method. Firstly, a generalized model of surface potential based on 2D Poisson equation for homojunction TFETs is developed. Secondly, the algorithm involves a number of geometrical operations on surface potential plots, which are performed computationally. From the plots of surface potential and the geometrical constructions, a parameter, range_point, is defined through mathematical formulations. The threshold voltage is determined by subjecting the range_point to a set of constraints which are found to be same for both the devices. The validity of the algorithm is confirmed by considering different parameters like drain voltage, gate oxide thickness, and temperature for both low‐k and high‐k gate dielectric materials in TFETs. The temperature variation is validated for a heterojunction TFET too using the same generalized model of surface potential.

show abstract

High-Current Tunneling FETs With (110) Orientation and a Channel Heterojunction

Cited by 23 publications

References 24 publications

A review of selected topics in physics based modeling for tunnel field-effect transistors

A review of selected topics in physics based modeling for tunnel field-effect transistors

High-Performance Complementary III-V Tunnel FETs with Strain Engineering

A temperature‐dependent surface potential‐based algorithm for extraction of threshold voltage in homojunction TFETs

Contact Info

Product

Resources

About