2016
DOI: 10.1117/12.2222762
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High definition 10μm pitch InGaAs detector with asynchronous laser pulse detection mode

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Cited by 10 publications
(9 citation statements)
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“…The detector covers a wide spectral range from the visible to the near infrared, covering most laser wavelengths of interest. To enable detection of low power laser pulses with an intensity within the background level generated by the illuminated earth, the asynchronous laser pulse detection mode (ALPD) is utilized [19]. In this mode a dedicated circuitry on the detector ROIC detects laser events in real time during image integration.…”
Section: Laser Threat Detectormentioning
confidence: 99%
“…The detector covers a wide spectral range from the visible to the near infrared, covering most laser wavelengths of interest. To enable detection of low power laser pulses with an intensity within the background level generated by the illuminated earth, the asynchronous laser pulse detection mode (ALPD) is utilized [19]. In this mode a dedicated circuitry on the detector ROIC detects laser events in real time during image integration.…”
Section: Laser Threat Detectormentioning
confidence: 99%
“…Spectro lab [14] 0.7@280K >10 13 80% >99% SUI [15] 2@12.5 °C >10 13 65% >99% FLIR [11] < 1@15 °C >10 13 70% >99.5% Aerius Photonics [9] 3.85@RT >10 13 80% 99.88% SCD [10] 0.5@280K >10 13 80% >99.5% SITP [8] <5@RT 5.3×10 under CDS mode than that under non-CDS mode. The ROIC noise is the main reason that causes the SNR and the detectivity D* to be lower under non-CDS mode.…”
Section: R and D Unitmentioning
confidence: 99%
“…The quantum efficiency (QE) at 1550 nm was 80%. The dark current density was 0.5 nA/cm 2 at 7 °C, and the operability was 99.5% [10]. FLIR researched and developed a 1,280 × 1,024 15 μm InGaAs detector.…”
Section: Introductionmentioning
confidence: 99%
“…In 2009, the FPA format has been raised to 1k×1k reported by MacDougal, et al [15] The MOVPE grown planartype devices show dark current density below 1.0 nA/cm 2 at −100-mV bias and 7 • C. Here, the planar-type device means that the pn junction is formed through diffusion in processing step, whereas mesa-type device means the the pn junction is formed during epitaxy by in situ doping. With the excellent characteristics of the lattice-matched InGaAs system and related mature technologies, and especially the clear prospect of the FPAs, such devices, including III-V lab and SOFRADIR in France, [16][17][18] SITP/CAS in China, [19] Fraunhofer IAF in Germany, [20] Aerius Photonics, Raytheon and Spectrolab in USA [21,22] SemiConductor Devices in Israel, [23] and so on, have been developed. For imaging purposes, 640×512 VGA format of 15-µm pitch, which is the most popular version for mass applications, has already matured and become products.…”
Section: Lattice-matched Ingaas Pds and Fpasmentioning
confidence: 99%
“…In the back illuminating case, the cut-on wavelength is determined by the bandgap of InP substrate to be about 0.93 µm, through thinning or removing the InP substrate and tailoring the epitaxial structure, the cut-on wavelength of the FPAs moved to shorter wavelength and entered into visible band, and even decreased down to 400 nm. [13,[16][17][18]23,24] The visible extended version of InGaAs FPAs can partially incorporate the function of Si CCD/CMOS camera into the system, which is desirable for certain applications. Special formats of the device are especially useful for applications in spectral sensing or line scan imaging.…”
Section: Lattice-matched Ingaas Pds and Fpasmentioning
confidence: 99%