High definition front projector using poly-Si TFT LCD

Yoneno, Kunio; Kamakura, Hiroshi; Nakamura, Junichi; Yajima, A.; Karasawa, Jun-ichi; Nakayama, T.; Ogihara, Masaki; Miyazawa, Y.; Banda, S.; Okamoto, Norihisa

doi:10.1109/displ.1991.167455

Cited by 4 publications

(1 citation statement)

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“…Poly-Si thin-film transistors (TFTs) [1] have been widely applied to flat-panel displays (FPDs) [2], such as liquidcrystal displays (LCDs) [3] for not only computer monitors and mobile displays but also light valves in data projectors [4], organic light-emitting diode displays (OLEDs) [5], and electronic papers [6]. Because display properties of the liquid crystals [7], [8] and organic light-emitting diodes [9], [10] have temperature dependences, it is required to compensate them by controlling driving conditions.…”

Section: Introductionmentioning

confidence: 99%

Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures

Taya

Kojima

Mukuda

et al. 2014

IEICE Trans. Electron.

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SUMMARYWe propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightlydoped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is confirmed that the offset TFTs have larger temperature dependence of the on current. Next, temperature dependences of oscillation frequencies are compared between ring oscillators using the LDD and offset TFTs. It is clarified that the ring oscillator using the offset TFTs is suitable to detect the temperature. We think that this kind of temperature sensor is available as a digital device. key words: temperature sensor, ring oscillator, poly-Si, thin-film transistor (TFT), lightly-doped drain structure (LDD), offset drain structure

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Section: Introductionmentioning

confidence: 99%

Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures

Taya

Kojima

Mukuda

et al. 2014

IEICE Trans. Electron.

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Hybrid LCD panel system and its color coding algorithm

Lee

Ko²,

Song³

1997

IEEE Trans. Consumer Electron.

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Thermal Sensor Using Poly-Si Thin-Film Transistors With Self-Aligned and Offset Gate Structures

et al. 2013

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We propose a thermal sensor using poly-Si thin-film transistors (TFTs) with self-aligned and offset gate structures. First, the temperature dependences of the transistor characteristic are compared between the self-aligned and offset TFTs. It is found that both the TFTs have the temperature dependence of the off-leakage current, whereas the off-leakage current of the self-aligned TFT is larger than that of the offset TFT. Next, the self-aligned and offset TFTs are included in a cell circuit to detect the temperature utilizing the off-leakage current, which is composed of a pair of 1-transistor and 1-capacitor. It is found that low and high temperatures can be detected using the self-aligned and offset TFTs, respectively. We think that it is promising to integrate this thermal sensor in certain applications using TFTs.Index Terms-Offset gate, off-leakage current, poly-Si, self-aligned gate, thermal sensor, thin-film transistor (TFT), temperature.

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High definition front projector using poly-Si TFT LCD

Cited by 4 publications

References 0 publications

Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures

Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures

Hybrid LCD panel system and its color coding algorithm

Thermal Sensor Using Poly-Si Thin-Film Transistors With Self-Aligned and Offset Gate Structures

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