High-Density NAND-Like Spin Transfer Torque Memory With Spin Orbit Torque Erase Operation

Wang, Zhaohao; Zhang, Lei; Wang, Mengxing; Wang, Zilu; Zhu, Daoqian; Zhang, Youguang; Zhao, Weisheng

doi:10.1109/led.2018.2795039

Cited by 132 publications

(41 citation statements)

References 14 publications

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“…Three‐terminal SOT–MTJ, with separated channels for writing and reading operations using SOTs and TMR, respectively, have many advantages for application: low power consumption, ultrafast writing (sub‐ns reversal), and high reliability . In addition, combining the SOTs and STT can overcome major drawbacks of the conventional STT–MRAM and SOT–MRAM . Erasing by SOTs and programming by STT offer a new path to design spin memory devices.…”

Section: Manipulation Of Magnetic Materials By Spin–orbit Torquesmentioning

confidence: 99%

Manipulation of Magnetization by Spin–Orbit Torque

Edmonds

Liu

et al. 2018

Adv Quantum Tech

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The control of magnetization by electric current is a rapidly developing area motivated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field sensors, spintronics, and nonvolatile memories. In recent years, the discovery of spin–orbit torque has opened a spectrum of opportunities to manipulate the magnetization efficiently. This article presents a review of the historical background and recent literature focusing on spin–orbit torques (SOTs), highlighting the most exciting new scientific results and suggesting promising future research directions. It starts with an introduction and overview of the underlying physics of spin–orbit coupling effects in bulk and at interfaces, and then describes the use of SOTs to control ferromagnets and antiferromagnets. Finally, the prospects for the future development of spintronic devices based on SOTs are summarized.

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Section: Manipulation Of Magnetic Materials By Spin–orbit Torquesmentioning

confidence: 99%

Manipulation of Magnetization by Spin–Orbit Torque

Edmonds

Liu

et al. 2018

Adv Quantum Tech

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“…FeRh has stood out as a highly intriguing material for applications in heatassisted magnetic recording 2,3 . Nowadays, with the rapid development of AFM spintronics aimed at low power and ultrafast logic devices [4][5][6][7][8][9] , FeRh attracts renewed interest as a unique AFM due to its particular physical properties during the phase transition. Benefiting from the ability to grow thin films of high quality, intensified functional devices based on the phase transition of FeRh have been proposed [10][11][12][13][14][15] .…”

mentioning

confidence: 99%

Spin pumping during the antiferromagnetic–ferromagnetic phase transition of iron–rhodium

et al. 2020

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FeRh attracts intensive interest in antiferromagnetic (AFM) spintronics due to its first-order phase transition between the AFM and ferromagnetic (FM) phase, which is unique for exploring spin dynamics in coexisting phases. Here, we report lateral spin pumping by which angular momentum is transferred from FM domains into the AFM matrix during the phase transition of ultrathin FeRh films. In addition, FeRh is verified to be both an efficient spin generator and an efficient spin sink, by electrically probing vertical spin pumping from FM-FeRh into Pt and from Py into FeRh, respectively. A dramatic enhancement of damping related to AFM-FeRh is observed during the phase transition, which we prove to be dominated by lateral spin pumping across the FM/AFM interface. The discovery of lateral spin pumping provides insight into the spin dynamics of magnetic thin films with mixed-phases, and the significantly modulated damping advances its potential applications, such as ultrafast spintronics.

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“…The fundamental reason is: changing the current direction only induces the inversion of the sign of spin polarization vectors ( + or − ), but + and − are symmetrical with respect to . Thus the direction of the write current can be fixed if the proposed device is used for designing the MRAM, which helps in eliminating the source degeneration issue of the access transistor [34,35]. Another two conclusions can be drawn from Figure 1(b).…”

Section: Simulation Modelsmentioning

confidence: 85%

Field-free spin–orbit-torque switching of perpendicular magnetization aided by uniaxial shape anisotropy

Wang

et al. 2019

Nanotechnology

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It has been demonstrated that the switching of perpendicular magnetization can be achieved with spin orbit torque (SOT) at an ultrafast speed and low energy consumption. However, to make the switching deterministic, an undesirable magnetic field or unconventional device geometry is required to break the structure inverse symmetry. Here we propose a novel scheme for SOT-induced field-free deterministic switching of perpendicular magnetization. The proposed scheme can be implemented in a simple magnetic tunnel junction (MTJ) /heavy-metal system, without the need of complicated device structure. The perpendicularanisotropy MTJ is patterned into elliptical shape and misaligned with the axis of the heavy metal, so that the uniaxial shape anisotropy aids the magnetization switching. Furthermore, unlike the conventional switching scheme where the switched final magnetization state is dependent on the direction of the applied current, in our scheme the bipolar switching is implemented by choosing different current paths, which offers a new freedom for developing novel spintronics memories or logic devices. Through the macrospin simulation, we show that a wide operation window of the applied current pulse can be obtained in the proposed scheme. The precise control of pulse amplitude or pulse duration is not required. The influences of key parameters such as damping constant and field-like torque strength are discussed as well.

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High-Density NAND-Like Spin Transfer Torque Memory With Spin Orbit Torque Erase Operation

Cited by 132 publications

References 14 publications

Manipulation of Magnetization by Spin–Orbit Torque

Manipulation of Magnetization by Spin–Orbit Torque

Spin pumping during the antiferromagnetic–ferromagnetic phase transition of iron–rhodium

Field-free spin–orbit-torque switching of perpendicular magnetization aided by uniaxial shape anisotropy

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