High density plasma chemical vapor deposition gap-fill mechanisms

Mungekar, H.; Lee, Young S.

doi:10.1116/1.2178364

Cited by 8 publications

(7 citation statements)

References 9 publications

(11 reference statements)

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“…Interestingly, the hybrid films also show a promising ability to fill high aspect ratio gaps without generating a seam, as evident in features 1, 4, 6, and 7. Seamless gap filling with materials other than Cu or W is a useful processing step in semiconductor device fabrication, providing a temporary support structure for chemical mechanical polishing and other processing steps. This suggests that hybrid films grown by MLD may have significant potential for use in low temperature, vapor‐phase seamless gap fill processes.…”

Section: Resultsmentioning

confidence: 94%

Structurally Stable Manganese Alkoxide Films Grown by Hybrid Molecular Layer Deposition for Electrochemical Applications

Bergsman

Baker

Closser

et al. 2019

Adv Funct Materials

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Hybrid molecular layer deposition (MLD) has significant potential for the creation of ultrathin electrochemically active materials, due to its ability to combine organic and inorganic species to modulate film properties. However, only a limited number of hybrid MLD processes are demonstrated with electrochemically relevant elements, such as manganese. Here, a "manganicone" manganese hybrid MLD chemistry is developed using the precursors bis(ethylcyclopentadienyl)manganese and ethylene glycol. The resulting manganese alkoxide coordination networks are shown to have many interesting properties, including the ability to seamlessly fill high aspect ratio vias and the chemical conversion into manganese carboxylate in air over several hours at room temperature. Linear, self-saturating growth is reported. Importantly, hybrid manganicone films annealed to 480 °C in air demonstrate a greater stability to restructuring during electrochemical testing than their inorganic counterparts grown by atomic layer deposition, without reducing the activity of the reactive sites on the manganese surface. Thus, hybrid manganese films grown by MLD have significant promise for use as catalysts for the oxygen evolution reaction and as electrodes in thin film batteries.

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Section: Resultsmentioning

confidence: 94%

Structurally Stable Manganese Alkoxide Films Grown by Hybrid Molecular Layer Deposition for Electrochemical Applications

Bergsman

Baker

Closser

et al. 2019

Adv Funct Materials

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Section: Introductionmentioning

confidence: 99%

“…Other authors have used TMS to study the mechanism of dense silicon dioxide film deposition and the behavior of plasma radicals during deposition [14]. In the early 21st century, many reports suggested that the effect of ion bombardment caused by the addition of an RF bias can optimize the gap filling and performance of SiO 2 films [15][16][17][18][19][20][21]. However, the deposition temperatures in these studies were typically maintained at 150-200 • C. Only a few studies on SiO 2 films deposited at 100 • C focused on the porosity, electrical properties, and stress of the thin films at low temperatures [22,23]; the SiO 2 layer tended to become less dense and more porous at ultralow temperature (<100 • C).…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Deposition of High-Quality SiO2 Films with a Sloped Sidewall Profile for Vertical Step Coverage

Liang

Zhong

et al. 2022

Coatings

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SiO2 is one of the most widely used dielectric materials in optical and electronic devices. The Josephson voltage standard (JVS) chip fabrication process has rigorous requirements for the deposition temperature and step-coverage profiles of the SiO2 insulation layer. In this study, we deposited high-quality SiO2 insulation films at 60 °C using inductively coupled plasma-chemical vapor deposition (ICP-CVD) to fulfill these requirements and fabricate JVS chips simultaneously. SiO2 films have a high density, low compressive stress, and a sloped sidewall profile over the vertical junction steps. The sidewall profiles over the vertical junction steps can be adjusted by changing the radio frequency (RF) power, ICP power, and chamber pressure. The effects of sputtering etch and sloped step coverage were enhanced when the RF power was increased. The anisotropy ratio of the deposition rate between the sidewall and the bottom of the film was lower, and the sloped step coverage effect was enhanced when the ICP power was increased, or the deposition pressure was decreased. The effects of the RF power on the stress, density, roughness, and breakdown voltage of the SiO2 films were also investigated. Despite increased compressive stress with increasing RF power, the film stress was still low and within acceptable limits in the device. The films deposited under optimized conditions exhibited improved densities in the Fourier transform infrared spectra, buffered oxide etch rate, and breakdown voltage measurements compared with the films deposited without RF power. The roughness of the film also decreased. The step-coverage profile of the insulation layer prepared under optimized conditions was enhanced in the junction and bottom electrode regions; additionally, the performance of the device was optimized. This study holds immense significance for increasing the number of junctions in future devices.

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“…HDP-CVD (high-density plasma chemical vapor deposition) has proven to be a successful process for shallow trench isolation (STI), pre-metal dielectric (PMD), and inter-metal dielectric (IMD) layers [1][2][3][4][5][6][7][8]. The HDP-CVD process achieves bottom-up gap fill in trench structures by simultaneous deposition and physical sputtering processes [4].…”

Section: Introductionmentioning

confidence: 99%

“…The HDP-CVD process achieves bottom-up gap fill in trench structures by simultaneous deposition and physical sputtering processes [4]. Source RF power provides energy to ignite and sustain the plasma.…”

Section: Introductionmentioning

confidence: 99%

Extending HDP for STI fill to 45nm with IPM

Wang¹,

Bloking²,

Wang³

et al. 2007

2007 International Symposium on Semiconductor Manufacturing

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A novel gap fill approach, Integrated Profile Modulation (IPM), with repeating deposition and etch cycles is developed to extend HDP for complete gap fill to 45nm node and beyond, with established HDP CVD film properties and integration. In this paper, the key aspects of the IPM process, deposition, etch, in-film fluorine and aluminum control are discussed to provide better understanding on gap fill optimization and manufacturing capability.

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High density plasma chemical vapor deposition gap-fill mechanisms

Abstract: Articles you may be interested inDensity change and viscous flow during structural relaxation of plasma-enhanced chemical-vapor-deposited silicon oxide films

Cited by 8 publications

References 9 publications

Structurally Stable Manganese Alkoxide Films Grown by Hybrid Molecular Layer Deposition for Electrochemical Applications

Structurally Stable Manganese Alkoxide Films Grown by Hybrid Molecular Layer Deposition for Electrochemical Applications

Low-Temperature Deposition of High-Quality SiO2 Films with a Sloped Sidewall Profile for Vertical Step Coverage

Extending HDP for STI fill to 45nm with IPM

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