High-density plasma chemical vapor deposition of silicon-based dielectric films for integrated circuits

Nguyen, S.

doi:10.1147/rd.431.0109

Cited by 57 publications

(37 citation statements)

References 41 publications

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“…High-density inductively coupled plasma is a well-known powerful etching source that readily sputters off loosely bonded materials during the simultaneous deposition/etching process. [15] Evidently, the presence of GeH 4 or germanium radicals plays a dominant role in the elimination of the gold particles during growth as a result of the fact that the melting point of Au±Ge alloy, relative to the binding strength, is lower than that of Au. Cross-sectional bright-field and high-resolution TEM images of the sample grown for 5 min indicate that the QDs are in intimate contact with the silicon oxide (Figs.…”

Section: Resultsmentioning

confidence: 99%

Low‐Temperature Growth of Germanium Quantum Dots on Silicon Oxide by Inductively Coupled Plasma Chemical Vapor Deposition

Shieh¹,

Chen

et al. 2004

Chemical Vapor Deposition

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We report on the fabrication of germanium quantum dots on silicon oxide and their growth mechanism. Germanium quantum dots were deposited by inductively-coupled plasma CVD at 400 C. Gold nanoparticles, attached to silicon oxide through a self-assembled monolayer, were adopted as catalysts to allow access to a vapor±liquid±solid process. The density of polycrystalline germanium dots is 1.46 10 11 cm ±2 , which is consistent with the density of the gold nanoparticles. The mechanism by which the undesirable gold catalysts are removed during the germanium dot growth process has been elucidated. This technique provides a low-temperature process for the fabrication of devices consisting of germanium quantum dots on an insulator surface.

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Section: Resultsmentioning

confidence: 99%

Low‐Temperature Growth of Germanium Quantum Dots on Silicon Oxide by Inductively Coupled Plasma Chemical Vapor Deposition

Shieh¹,

Chen

et al. 2004

Chemical Vapor Deposition

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“…All HDPCVD dielectrics were deposited without a rf bias power due to dielectric gap-filling not considered herein. 8 Fourier-transform infrared ͑FTIR͒ spectroscopy, x-ray photoelectron spectroscopy ͑XPS͒, and Rutherford backscattering spectrometry were employed to characterize the silicon/carbon ratio and hydrogen concentration ͑atom percentage͒ in relation to deposition parameters. [3][4][5] The mechanical properties of films were examined using a nanoindenter ͑MTS, Inc.͒.…”

Section: Low Hydrogen Content In Trimethylsilane-based Dielectric Barmentioning

confidence: 99%

Low hydrogen content in trimethylsilane-based dielectric barriers deposited by inductively coupled plasma

Shieh

Tsai

Dai

2002

Applied Physics Letters

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Dielectric barriers of trimethylsilane-based hydrogenated amorphous silicon carbide (a-SiCx:H) for damascene metalization were synthesized by inductively coupled plasma (ICP) chemical vapor deposition methods. The high ionization efficiency from ICP, resulting in a-SiCx:H films that contain only a little hydrogen, is explored as a major mechanism that yields such a film not only with a high breakdown field of 3.7 MV/cm and a low leakage current <6.0×10−10 A/cm2 (at 1.0 MV/cm), but also with a low stress (−5 MPa) and high hardness (11 GPa). Additionally, the dielectric constant of the a-SiCx:H films is maintained below 4.2.

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“…A good example is its application in the so-called Power MEMS, an important class of MEMS devices designed to generate electrical and mechanical power (Nguyen 1999;Mehra et al 2000;Wong et al 2004). These devices (i.e., micro-scale high power-density heat engines and related components including, for example, micro combustors, micro heat exchangers, micro igniters, micro motor compressors, etc.)…”

Section: Introductionmentioning

confidence: 99%

Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

Zhang¹

2007

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, seerching data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Washington Headquarters Service, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and SUPPLEMENTARY NOTES14. ABSTRACT Plasma enhanced chemical vapor deposited (PECVD) silicon oxide (SiOx) is the most commonly used interlayer dielectric (ILD) in MEMS devices and structures. In this project, PECVD SiOx is chosen as an example for the systematic study of mechanical behavior and underlying casual mechanisms of amorphous thin films for MEMS applications, which are generally less well understood because of the complex interplay among the deformation mechanisms. In this project, PECVD SiO, is chosen as an example for the systematic study of mechanical behavior and underlying causal mechanisms of amorphous thin films for MEMS applications, which are generally less well understood because of the complex interplay among the deformation mechanisms. SUBJECT TERMSMechanical behaviors of the PECVD SiOx thin films are probed at 1) different size scales (from wafer level down to micro/nano-scale, and different lengthscale within each realm); 2) different temperatures (from room temperature up to 1100 0C); and 3) with a combination of different experimental techniques (such as substrate curvature measurements, nanoindentation tests, and a novel "microbridge testing" technique, etc.). A broad range of mechanical analysis is covered, including film stress and related material properties changes, elastic properties, plastic properties (both time-independent and time-dependent), deformation mechanisms (both at room temperature and elevated temperatures).Wherever applicable, materials analysis techniques such as SEM, AFM, FTIR, XRD, and SIMS were employed to strengthen the discussions on the structureproperties relationship and the causal mechanisms of the mechanical responses of the PECVD SiOx. These experiments reveal various interesting arid disiirictive characteristics of the mechanical responses of the PECVD SiOx thin films, and the microstructural causal mechanisms for each of them are analyzed in depth.The outcome of this work will provide a comprehensive characterization of the mechanical responses of the PECVD SiOx thin films under different thermal conditions, stress levels, size scales, and in both elastic and plastic regions. In addition, both new experimental methodologies and theoretical models for data 3 analysis are resulted, which can be readily applied to a wide variety of thin film materials for various different applications. Last but not least, the physical causal mechanisms for the experimental results are elucidated, ...

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High-density plasma chemical vapor deposition of silicon-based dielectric films for integrated circuits

Cited by 57 publications

References 41 publications

Low‐Temperature Growth of Germanium Quantum Dots on Silicon Oxide by Inductively Coupled Plasma Chemical Vapor Deposition

Low‐Temperature Growth of Germanium Quantum Dots on Silicon Oxide by Inductively Coupled Plasma Chemical Vapor Deposition

Low hydrogen content in trimethylsilane-based dielectric barriers deposited by inductively coupled plasma

Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

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