High-density plasma etching of indium–zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

Lim, Wantae; Stafford, L.; Song, Ju-Il; Park, Jae-Soung; Heo, Young‐Woo; Lee, Joon‐Hyung; Kim, Jeong-Joo; Pearton, S. J.

doi:10.1016/j.apsusc.2006.05.052

Cited by 14 publications

(5 citation statements)

References 37 publications

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“…Most ZnO etching processes are dominated by wet etching due to the simple operation and the possibility of etching ZnO in different acids and alkalis such as H 2 O 2 , HCl, H 3 PO 4 , or NH 4 Cl. − Etching at the microdimension using wet chemistry is sufficient; unfortunately, it is not suitable at the nanoscale because the wet chemistry technology etches isotropically, meaning that manufacturing deep nanostructures is not possible. To counteract this, different plasma chemistries have been investigated for dry etching ZnO films such as CF 4 /Ar, BCl 3 /CH 4 /H 2 , IBr, and BI 3 plasma chemistries. − Unfortunately, to produce zinc oxide nanostructures for devices requires multiple processing steps and adds to the associated production costs.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale Patterning of Zinc Oxide from Zinc Acetate Using Electron Beam Lithography for the Preparation of Hard Lithographic Masks

Chaker

Alty

Tian

et al. 2020

ACS Appl. Nano Mater.

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An approach is presented for nanoscale patterning of zinc oxide (ZnO) using electron beam (e-beam) lithography for future nanoelectronic devices and for hard lithographic masks. Zinc acetate (Zn4O(CH3COO)6) films were exposed using a scanning electron microscope (SEM), causing decomposition of Zn4O(CH3COO)6 into ZnO. The exposure of Zn4O(CH3COO)6 using an electron beam was successfully utilized to fabricate 12 nm zinc oxide lines with a 40 nm pitch on silicon. The chemical composition of zinc acetate (film before e-beam exposure) and ZnO (film after e-beam exposure) was investigated using X-ray spectroscopy (XPS). The Zn 2p shift peaks and the O 1s contribution confirmed the decomposition of zinc acetate into zinc oxide after exposure. To confirm this transformation into ZnO, the optical band gap of the film was determined and the electrical resistivity of the film was measured. The electrical resistivity and the optical band gap results revealed the transformation into a ZnO film with a band gap of 3.31 eV at room temperature and an electrical resistivity of 91.5 Ω cm. The ZnO patterns were used as a hard mask to etch silicon, and it showed a good selectivity of 27:1 for dry etching silicon using SF6 and C4F8.

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Section: Introductionmentioning

confidence: 99%

Nanoscale Patterning of Zinc Oxide from Zinc Acetate Using Electron Beam Lithography for the Preparation of Hard Lithographic Masks

Chaker

Alty

Tian

et al. 2020

ACS Appl. Nano Mater.

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“…liquid-crystal display, plasma display panel), solar panels, organic light-emitting diodes, or in other electro-optical devices as transparent electrodes [1][2][3][4]. TCOs of binary, ternary or quaternary compositions combining In, Zn, Cd, Sn and Ga have been reported [5][6][7][8][9], while the Sn-doped In 2 O 3 (ITO), F-doped SnO 2 , and Al-doped ZnO are acclaimed for the properties required for transparent electrodes [9]. ITO thin film is the most used among the TCOs, and industrially recognized in terms of the better characteristics of transparency to visible light, electric conduction and thermal reflection [4,10].…”

Section: Introductionmentioning

confidence: 99%

Selective recovery of indium from the etching waste solution of the flat-panel display fabrication process

Hasegawa

Rahman

Umehara

et al. 2013

Microchemical Journal

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“…Applications of O 2 plasmas include the surface activation and cleaning of polymers [1], ashing of organic materials [2], and anisotropic etching of Si [3]. Cl 2 plasmas are employed to etch Si [4], metals [5], and high-k dielectrics [6] in the semiconductor industry and emerging materials such as transparent conducting oxides [7], electro-optic oxides [8], ferroelectrics [9], and ferromagnetics [10] of interest for the fabrication of optoelectronic, photonic, and spintronic devices. An important parameter to control for these applications is the number density of O and Cl atoms [11,12].…”

Section: Introductionmentioning

confidence: 99%

Experimental and modeling study of O and Cl atoms surface recombination reactions in O2 and Cl2 plasmas

Stafford

Guha

Khare

et al. 2010

Pure and Applied Chemistry

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Abstract:In low-pressure plasmas commonly used in materials processing, plasma-wall inter actions play a crucial role in the evolution of the plasma properties both over time and across large-area wafers. We have recently studied the heterogeneous recombination of O and Cl atoms on reactor walls in O 2 and Cl 2 plasmas through both experiments and modeling. The Langmuir-Hinshelwood (i.e., delayed) recombination was investigated using a "spinning-wall" technique in which a portion of the substrate surface is periodically exposed to an inductively coupled plasma and to a differentially pumped chamber where either Auger electron spectroscopy (AES) or line-of-sight mass spectrometry (MS) is used to detect surface and desorbing species. In this paper, a review of the various effects driving the O and Cl atoms recombination dynamics on anodized aluminum (AA) and stainless steel (SS) surfaces is presented. It is shown that recombination probabilities, γ, can vary following plasma exposure due to surface conditioning. In Cl 2 plasmas, γ was also found to depend on the Cl-toCl 2 number density ratio, a mechanism ascribed to a competition for adsorption sites between Cl and Cl 2 . We have also determined the recombination rates of Cl atoms in Cl 2 high-density plasmas sustained by electromagnetic surface waves by comparing the measured degrees of dissociation of Cl 2 to those predicted by an isothermal fluid model. For a reactor with large SS and quartz surfaces exposed to the plasma, γ values and their dependence on the Cl-toCl 2 number density ratio were consistent with those obtained from the rotating substrate technique. Similar values were obtained for plasmas sustained in a quartz discharge tube. It is expected that for plasmas sustained in or adjacent to a silica tube or plate, the Cl atoms recombination coefficient becomes independent of chamber wall material due to reactor seasoning, producing a silicon-oxychloride layer.

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High-density plasma etching of indium–zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

Cited by 14 publications

References 37 publications

Nanoscale Patterning of Zinc Oxide from Zinc Acetate Using Electron Beam Lithography for the Preparation of Hard Lithographic Masks

Nanoscale Patterning of Zinc Oxide from Zinc Acetate Using Electron Beam Lithography for the Preparation of Hard Lithographic Masks

Selective recovery of indium from the etching waste solution of the flat-panel display fabrication process

Experimental and modeling study of O and Cl atoms surface recombination reactions in O2 and Cl2 plasmas

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