High-density racetrack memory based on magnetic skyrmion bags controlled by voltage gates

Abstract

Skyrmion bags are spin structures with arbitrary topological degrees. They are expected to be promising next-generation information carriers due to their inherent high topological degrees. Here, we report the dynamics of the topological transition process when a skyrmion bag passes through a voltage gate driven by spin current in a synthetic antiferromagnetic racetrack with voltage-controlled magnetic anisotropy. The topological degrees of skyrmion bags controlled by voltage gate and driving current density are investigated. It is found that the different topological degrees of skyrmion bags transformed in this process are related to the interaction between antiskyrmions inside skyrmion bags, and the energy of each inner antiskyrmion after topological transformation is on the order of [Formula: see text]. Furthermore, we have realized the successive transition of a skyrmion bag from a high topological degree to a low topological degree on a racetrack with three voltage gates. This work is helpful for designing high-density racetrack memory and logical devices based on skyrmion bags.