High detectivity and fast response avalanche photodetector based on GaSe/PtSe2 p–n junction

Gong, Kaiwen; Li, Lianbi; Yu, Wenzhi; Mu, Haoran; Yuan, Jian; Hao, Ran; Liu, Baiquan; Mei, Luyao; Li, Haozhe; Lin, Shenghuang

doi:10.1016/j.matdes.2023.111848

Cited by 13 publications

(2 citation statements)

References 24 publications

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“…However, because air bubbles and wrinkles are bound to enter the heterojunction, it is challenging to control the interface conditions. High sensitivity, quick reaction times, and a wide response range are all essential for various applications, including optical signal reception in modems, 218 image recognition in cameras 219,220 and infrared temperature observation in electronic thermometers. 221–223 Owing to their unique optoelectronic characteristics, 2D materials are currently a viable solution for the functional layer to achieve excellent detectivity, quick reaction times, and broad detection ranges.…”

Section: Heterostructure P–n Junctions Based On 2d Materialsmentioning

confidence: 99%

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

Elahi,

Ahmad,

Dahshan

et al. 2024

Nanoscale

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Section: Heterostructure P–n Junctions Based On 2d Materialsmentioning

confidence: 99%

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

Elahi,

Ahmad,

Dahshan

et al. 2024

Nanoscale

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“…More specifically, photo-sensors are the elementary unit of any imaging system which mainly absorbs the incident light and converts it to the electrical signals in the form of photocurrent or photovoltage. Several physical phenomena such as photoconduction, − photogating, − persistent photocurrent, ,− avalanche photodetection, − photovoltaics, ,− photo-thermal effect, − and photo-bolometric effect − can occur to generate the electric charge in a photo-sensing device. Depending upon the specific characteristics of the used 2D material, the suitable physical mechanisms for the electric charge generation can be exploited to develop the flexible PD device.…”

Section: Applications For Flexible Electronicsmentioning

confidence: 99%

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Katiyar,

Hoang,

et al. 2023

Chem. Rev.

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Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

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High‐Performance Single‐Microplate Perovskite Photodetectors Based on Polyvinyl Alcohol Filled Planar Electrodes for Weak‐Light Imaging and Pixel Integration

Mei,

Yu,

Cui

et al. 2024

Adv Funct Materials

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Photoconductors featuring an individual micro/nano‐crystal as the photoactive channel hold the great promise for next‐generation integrated optoelectronics. Meanwhile, the gain aiming for signal amplification without an extra amplifier, the fast response for fast data transfer, and low dark current for weak signal acquisition are highly desirable in integrated optoelectronics, but are inherent trade‐off in traditional photoconductors. Herein, the study demonstrates a single‐microplate MAPbI3 photoconductor based on polyvinyl alcohol‐filled planar electrodes that can simultaneously achieve excellent performance on these parameters. The superior performance can be attributed to the exquisite design of filling the device channel gap with polyvinyl alcohol. This deep‐work‐function transparent polyvinyl alcohol can not only passivate surface defects of the perovskite microplate by hydrogen bonding, but also form a heterojunction with top perovskites to induce a depleted channel. Resultant single‐microplate photodetectors exhibit exceptional performance characteristics including ultra‐low noise‐equivalent power of 0.19 fW Hz−1/2, high specific detectivity of 3.68 × 1014 Jones, fast response of 3.2 µs, high EQE‐bandwidth over 107 Hz, as well as excellent stability. More importantly, single‐microplate MAPbI3 photoconductors demonstrate ultra‐weak‐light imaging ability surpassing silicon counterparts. Furthermore, the successful integration of their microplate pixels showcases the promising prospect for integrated optoelectronics.

show abstract

High detectivity and fast response avalanche photodetector based on GaSe/PtSe2 p–n junction

Cited by 13 publications

References 24 publications

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

High‐Performance Single‐Microplate Perovskite Photodetectors Based on Polyvinyl Alcohol Filled Planar Electrodes for Weak‐Light Imaging and Pixel Integration

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