High-Detectivity and High-Single-Photon-Detection-Efficiency 4H-SiC Avalanche Photodiodes

Bai, Xiaogang; Liu, Han-Din; McIntosh, Dion; Campbell, Joe C.

doi:10.1109/jqe.2009.2013093

Cited by 52 publications

(24 citation statements)

References 17 publications

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“…3. Both the photocurrent and dark current of the photodetector increase fast initially with the bias voltage, then they saturate gradually when the applied voltage is larger than 12 V, and the currents increase again abruptly when the bias voltage is over 16 V, indicating that a carrier avalanche multiplication may have occurred 13–17. The avalanche gain ( M ) of the structure can be determined using the following expression 20:…”

Section: Resultsmentioning

confidence: 99%

“…Various structured MgZnO photodetectors like metal–semiconductor–metal, Schottky, and photoconductive‐type have been reported in recent years 12. It is accepted that avalanche photodetectors (APDs) can offer a high internal gain by the carrier avalanche multiplication process as well as a high response speed 13–17. However, since APDs are usually realized in p–i–n junction‐based structures, whereas the reproducible and stable p‐type doping of ZnO‐based materials is still a challenging issue, no report on MgZnO‐based APDs can be found up to date.…”

Section: Introductionmentioning

confidence: 99%

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MgZnO avalanche photodetectors realized in Schottky structures

Shan

Liu

et al. 2013

Physica Rapid Research Ltrs

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MgZnO‐based ultraviolet avalanche photodetectors (APDs) have been fabricated from Au/MgO/Mg0.44Zn0.56O/MgO/Au Schottky structures. The carrier avalanche multiplication is realized via an impact ionization process occurring in the MgO layer under relatively large electric field. The APDs exhibit an avalanche gain of 587 at 31 V bias, and the response speed of the APDs is in the order of microseconds.magnified image(© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

MgZnO avalanche photodetectors realized in Schottky structures

Shan

Liu

et al. 2013

Physica Rapid Research Ltrs

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“…In practical applications, APDs need to be periodically quenched below breakdown bias to avoid permanent damage, and photons can be detected only when APDs are under breakdown. This compromise between high gain and sustainable detection, commonly known as Geiger-mode 20,21 , restricts the applications of current APDs for the complexity of system. Since the reasons mentioned above are intrinsic, these crucial bottlenecks have perplexed the researcher for many years.…”

Section: Introductionmentioning

confidence: 99%

A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

Zheng

Wang

et al. 2016

Applied Physics Letters

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Abstract:Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace the bulky and fragile photomultiplier tubes (PMT) for weak light detection. However, intrinsic limits in semiconductors make the former still inferior to the latter on device performance up to now. In conventional APDs, a large portion of carrier energy drawn from the electric field is thermalized, and the multiplication efficiencies of electron and hole are low and close. In order to achieve high gain, the device has to work under breakdown bias, wherein carrier multiplication proceeds bi-directionally to form a positive feedback multiplication circle. In this case, APDs should work under Geiger mode as a compromise between sustainable detection and high gain. On the other hand, PMT can achieve stable high gain under constant bias (linear mode). Here, we demonstrate an APD works like a PMT, which means it can work under constant bias and holds high gain without breakdown simultaneously. The device is based on a GaN/AlN periodically-stacked-structure (PSS). For the PSS holds the intrinsic features that there are deep Γ valleys and larger band offset in conduction band, electron encountered much less scatterings during transport in PSS APD. Electron holds much higher efficiency than hole to draw energy from the electric field, and avalanche happens uni-directionally with high efficiency. Extremely high ionization coefficient (3.96×10 5 /cm) of electron and large ionization coefficient ratio (over 100) between electron and hole is calculated in the PSS APD by Monte-Carlo simulations and a recorded high gain (10 4 ) tested under constant bias without breakdown is obtained in a prototype device, wherein the stable gain can be determined by the periodicity of the GaN/AlN PSS and no quenching circuits are needed for sustainable detection. This work not only brings a new light into avalanche multiplication mechanism, but also paves a technological path to realize highly sensitive APD working under constant bias like PMT.Keywords: Avalanche photodiode; GaN; Ionization; Periodically stacked structure; Transport Introduction:

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“…While PMTs offer a low dark count rate (DCR) and a large sensing area, they are bulky and characterized by low single photon detection efficiency (SPDE). Alternatively, the development of reliable semiconductor single photon avalanche detectors (SPADs) that operate in the SB-UV band with acceptably low DCR and high SPDE are under development (e.g., [3], [4]). Although an individual SPAD typically has a small active area to reduce the capacitance, it has the capability to be integrated into an array of detectors for applications such as imaging [5].…”

Section: Introductionmentioning

confidence: 99%

Spatial-Diversity Imaging Receivers for Non-Line-of-Sight Solar-Blind UV Communications

El-Shimy

Hranilovic

2015

J. Lightwave Technol.

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Optical wireless links in the solar-blind ultraviolet (SB-UV) band transmit data without the need of a line-of-sight through the use of atmospheric scattering. These links have a host of advantages including security, covertness and ease of deployment, however, they inherently suffer large path loss and delay spread due to the underlying atmospheric scattering process. This paper considers the use of spatial degrees of freedom at the receiver to improve the information rates of SB-UV channels. Classical scattering link models are extended to provide both temporal and spatial arrival information for scattered photons. A spatiotemporal channel model is developed for SB-UV channels using multi-element imaging receivers. Spatial diversity techniques for delay compensation and detector noise suppression are presented and information rates under equally likely signalling are computed to contrast their performance. In the particular cases considered, the information rate using a spatial diversity receiver is improved approximately 50% over single element receiver channels. Index Terms-Atmospheric scattering channels, diversity receivers, information rates.0733-8724 © 2015 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.See http://www.ieee.org/publications standards/publications/rights/index.html for more information. Mohamed A. El-Shimy (S'09-M'15) received the B.Sc. (distinction with honors) and M.Sc. degrees in electrical engineering

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High-Detectivity and High-Single-Photon-Detection-Efficiency 4H-SiC Avalanche Photodiodes

Cited by 52 publications

References 17 publications

MgZnO avalanche photodetectors realized in Schottky structures

MgZnO avalanche photodetectors realized in Schottky structures

A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

Spatial-Diversity Imaging Receivers for Non-Line-of-Sight Solar-Blind UV Communications

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