High-Detectivity <i>β</i>-Ga₂O₃ Microflake Solar-Blind Phototransistor for Weak Light Detection

Yu, Shunjie; Zhao, Xiaolong; Ding, Mengfan; Tan, Pengju; Hou, Xiaohu; Zhang, Zhongfang; Mu, Wenxiang; Jia, Zhitai; Tao, Xutang; Xu, Guangwei; Long, Shibing

doi:10.1109/led.2021.3050107

Cited by 48 publications

(27 citation statements)

References 44 publications

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“…The photodetectors with the ability to realize wide photoresponse range, particularly from solar‐blind ultraviolet (SBUV) to near‐infrared (NIR) region, are important for biosensing, astronomical observation, and optical communication. [ 1 ] Commercial photodetectors are usually designed with different semiconductors as active materials to sense light with different wavelengths, such as GaN for UV region, Si and Ge for visible region, InGaAs and HgCdTe for infrared region. However, photodetectors based on these materials have narrow‐band response and complicated fabrication process, and they require high cost and strict low‐temperature conditions.…”

Section: Introductionmentioning

confidence: 99%

Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS

et al. 2021

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2D materials have been attracting high interest in recent years due to their low structural symmetry, excellent photoresponse, and high air stability. However, most 2D materials can only respond to specific light, which limits the development of wide‐spectrum photodetectors. Proper bandgap and the regulation of Fermi level are the foundations for realizing electronic multichannel transition, which is an effective method to achieve a wide spectral response. Herein, a noble 2D material, palladium phosphide sulfide (PdPS), is designed and synthesized. The bandgap of PdPS is around 2.1 eV and the formation of S vacancies, interstitial Pd and P atoms promote the Fermi level very close to the conduction band. Therefore, the PdPS‐based photodetector shows impressive wide spectral response from solar‐blind ultraviolet to near‐infrared based on the multichannel transition. It also exhibits superior optoelectrical properties with photoresponsivity (R) of 1 × 103 A W−1 and detectivity (D*) of 4 × 1011 Jones at 532 nm. Moreover, PdPS exhibits good performance of polarization detection with dichroic ratio of ≈3.7 at 808 nm. Significantly, it achieves polarimetric imaging and hidden‐target detection in complex environments through active detection.

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Section: Introductionmentioning

confidence: 99%

Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS

et al. 2021

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“…Correspondingly, there are three types of oxygen ions in the unit cell, which leads to an anisotropy in thermal conductivities, [ 11 ] phonon vibrational modes, [ 12 ] effective mass, [ 13 ] optical bandgap, [ 14 ] and surface formation energy. [ 15 ] Owing to its wide bandgap and outstanding material properties including a decent mobility (100 cm 2 V −1 s −1 ), and a high breakdown field (8 MV cm −1 ), β‐Ga 2 O 3 is emerging as a promising new candidate for applications in DUV PDs, [ 16–20 ] transparent conducting layers [ 21 ] and power semiconductor devices. [ 22 ] More importantly, the β‐Ga 2 O 3 with an intrinsic bandgap ( E g ) of ≈4.8 eV can avoid the alloying processing and thus simplify the material growth, making it naturally suitable for the application in ultraviolet detection.…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh‐Performance Solar‐Blind Photodetectors Based on High Quality Heteroepitaxial Single Crystalline β‐Ga₂O₃ Film Grown by Vacuumfree, Low‐Cost Mist Chemical Vapor Deposition

Chen

et al. 2021

Adv Materials Technologies

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Due to the suitable bandgap, superior chemical and physical properties, the β‐phase gallium oxide (β‐Ga2O3) has the great potential to fabricate the deep ultraviolet solar‐blind photodetectors (DUV PDs). However, the low material quality, high material growth cost, and insufficient device performance, are urgently required to be solved for practical applications. In this work, by using a vacuumfree, low‐cost mist chemical vapor deposition method, the high quality β‐Ga2O3 single crystal films are successfully heteroepitaxially grown on (0001) sapphire substrates. X‐ray diffraction and transmission electron microscopy measurements identify the heteroepitaxial relationship with (2true¯01) β‐Ga2O3‖(0001) sapphire. At the optimal growth temperature of 800 °C, the film shows a high quality pure β‐Ga2O3 phase with the small full width at half maximum of 0.71°. Furthermore, the metal–semiconductor–metal DUV PDs are fabricated based on such single crystal β‐Ga2O3 films, which exhibit excellent photoelectric performance. A very high photoresponsivity 22 000 A W−1 under 254 nm light illumination, which corresponds to a quantum efficiency of 1.07 × 107% and a high detectivity of 1.1 × 1016 Jones, almost the highest ever reported. The low‐cost film heteroepitaxial growth method and the ultrahigh device performance pave an alternative way for the fabrication of high‐performance β‐Ga2O3 solar‐blind DUV PDs.

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“…[50][51][52][53][54] Figure 4b also shows that the photoresponse of the device is due to the β-Ga 2 O 3 film and is not related to the absorption of the Si substrate because the responsivity of Si increases for wavelengths above 350 nm. [38,56,[63][64][65][66][67][68][69][70][71][72][73] The gate voltages at which the highest PDCRs were observed are compared for various Ga 2 O 3 PDs, as shown in Figure 5. From the figure, the gate voltages are observed to increase as the thickness of Ga 2 O 3 is reduced; this means that normally off PDs are preferable for simplicity of the gate-driver circuitry and low power consumption under standby conditions.…”

Section: Resultsmentioning

confidence: 99%

“…Figure 5. Comparison of the V G values at which maximum PDCRs are reported for Ga 2 O 3 thickness for various Ga 2 O 3 PDs [38,56,[63][64][65][66][67][68][69][70][71][72][73]. …”

mentioning

confidence: 99%

Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga₂O₃ UV Phototransistor for Normally Off Operation

Yoon

Hwang

Shin

2022

Advanced Photonics Research

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Deep ultraviolet (DUV) photodetectors (PDs) based on ultrawide bandgap β‐Ga2O3 have great potential for aerospace, military, and civilian applications, especially because of their inherent solar blindness. An 8 nm thick Sn‐doped polycrystalline β‐Ga2O3 semiconductor is used as the channel material for a solar‐blind PD in this study. The β‐Ga2O3 channel is fully depleted by upward bending of the energy band owing to the work function difference between the highly p‐type Si (gate electrode) and β‐Ga2O3, resulting in normally off behavior with a positive threshold voltage under dark conditions. The normally off behavior is beneficial for simplicity of the gate‐driver circuitry and low power consumption under standby conditions. The fully depleted 8 nm thick polycrystalline β‐Ga2O3 exhibits high‐performance DUV detection capability of light at 215 nm: a low dark current of 29.3 pA and high photo‐to‐dark‐current ratio of ≈104 at zero gate voltage. This fully depleted n‐type β‐Ga2O3 semiconductor with a wafer‐scale substrate can expedite the realization of high‐performance and low‐power‐consumption solar‐blind PDs.

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High-Detectivity β-Ga₂O₃ Microflake Solar-Blind Phototransistor for Weak Light Detection

Cited by 48 publications

References 44 publications

Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS

Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS

Ultrahigh‐Performance Solar‐Blind Photodetectors Based on High Quality Heteroepitaxial Single Crystalline β‐Ga₂O₃ Film Grown by Vacuumfree, Low‐Cost Mist Chemical Vapor Deposition

Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga₂O₃ UV Phototransistor for Normally Off Operation

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High-Detectivity β-Ga₂O₃ Microflake Solar-Blind Phototransistor for Weak Light Detection

Cited by 48 publications

References 44 publications

Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS

Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS

Ultrahigh‐Performance Solar‐Blind Photodetectors Based on High Quality Heteroepitaxial Single Crystalline β‐Ga2O3 Film Grown by Vacuumfree, Low‐Cost Mist Chemical Vapor Deposition

Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga2O3 UV Phototransistor for Normally Off Operation

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Product

Resources

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Ultrahigh‐Performance Solar‐Blind Photodetectors Based on High Quality Heteroepitaxial Single Crystalline β‐Ga₂O₃ Film Grown by Vacuumfree, Low‐Cost Mist Chemical Vapor Deposition

Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga₂O₃ UV Phototransistor for Normally Off Operation