High dielectric constant (Ba0.65Sr0.35)(Ti0.41Zr0.59)O3 capacitors for Gbit-scale dynamic random access memory devices

Kim, Jae-Sun; Yoon, Seok-Jun

doi:10.1116/1.591175

Cited by 40 publications

(4 citation statements)

References 11 publications

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“…The paraelectric (1 − x)BaTiO 3 -xSrZrO 3 ; x 0.2 ceramics are chemically more stable, and have a lower transition temperature (T c ) and a high dielectric constant [1]. (1 − x)BaTiO 3 -xSrZrO 3 compounds have been applied in microwave dielectric resonators, which are miniature resonating devices used in microwave integrated circuits [2]. The tunability and figure of merit of (Ba 0.75 Sr 0.25 ) (Zr 0.25 Ti 0.75 )O 3 thin films are 53% and 38, respectively, and are promising candidates for microwave tunable devices [1,3].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of (Ba_1−xSr_x)(Zr_xTi_1−x)O₃ceramics prepared using the combustion technique

Thongtha¹,

Angsukased²,

Bongkarn³

2010

Smart Mater. Struct.

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Barium strontium zirconate titanate ((Ba 1−x Sr x )(Zr x Ti 1−x )O 3 ; BSZT, x = 0.25 and 0.75) ceramics with a highly crystalline structure were successfully synthesized using the combustion technique, in which urea performed an important role. The effect of calcination (1000-1300 • C) and sintering temperatures (1300-1550 • C) on the phase formation and microstructure of BSZT ceramics were investigated. The pure perovskite phase of BSZT (x = 0.25 and 0.75) powders with a uniform cubic morphology were detected at the calcination temperature of 1300 • C. At the same calcination and sintering temperature, the lattice parameter a of BSZT powder and ceramics with x = 0.75 is higher than x = 0.25. The microstructure of BSZT powders exhibited an almost-spherical morphology and had a porous agglomerated form. The average particle size and the average grain size of all ceramics increased with the increase of calcination and sintering temperatures, but decreased when the content of x increased. The maximum densities of x = 0.25 and 0.75 ceramics were around 5.85 and 5.62 g cm −3 obtained from the samples sintered at 1500 and 1450 • C, respectively.

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Section: Introductionmentioning

confidence: 99%

Fabrication of (Ba_1−xSr_x)(Zr_xTi_1−x)O₃ceramics prepared using the combustion technique

Thongtha¹,

Angsukased²,

Bongkarn³

2010

Smart Mater. Struct.

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“…Recently, the various functional thin films were widely focused on the applications in nonvolatile random access memory (NvRAM), such as smart cards and portable electrical devices, utilizing excellent memory characteristics, high storage capacity, long retention cycles, low electric consumption, nonvolatility, and high speed readout. Additionally, the various nonvolatile random access memory devices such as ferroelectric random access memory (FeRAM), magnetron memory (MRAM), resistance random access memory (RRAM), and flash memory were widely discussed and investigated [1][2][3][4][5][6][7][8][9]. However, the high volatile pollution elements and high fabrication cost of the complex composition material were serious difficult problems for applications in integrated circuit semiconductor processing.…”

Section: Instructionsmentioning

confidence: 99%

Memory and Electrical Properties of (100)‐Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

Lee

Jhong

et al. 2014

Journal of Nanomaterials

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The (100)-oriented aluminum nitride (AlN) thin films were well deposited onto p-type Si substrate by radio frequency (RF) magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as-deposited (002)- and (100)-oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100)-oriented AlN thin films are better than those of (002)-oriented thin films. Besides, the interface and interaction between the silicon and (100)-oriented AlN thin films was serious important problem. Finally, the current transport models of the as-deposited and annealed (100)-oriented AlN thin films were also discussed. From the results, we suggested and investigated that large memory window of the annealed (100)-oriented AlN thin films was induced by many dipoles and large electric field applied.

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“…For example, Pb(Zr,Ti)0 3 , Sr2Bi2Ta209, SrTi0 3 , Ba(Zr,Ti)03, and (Ba,Sr)Ti03 thin films have been widely studied and discussed for larger storage capacity FeRAM devices [1][2][3][4][5], In the past years, the layer-structured ferroelectric compounds were one of the most technologically interesting materials for the memory 76 W. C. Chang et al…”

Section: Introductionmentioning

confidence: 99%

Effects of Substrate and Annealing Temperatures on the Characteristics of SrBi₄Ti₄O₁₅ Thin Films

Chang

Diao

Tzou

et al. 2014

Integrated Ferroelectrics

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In this study, radio frequency (RF) sputtering was used as the method and the layerstructured bismuth compound o f SrBi4 Ti4 Ols + 4 wt% Bi2C >3 ferroelectric ceramic was used as the target to deposit the SrBi4 Ti4 Oi5 (SBT) thin films. The addition o f excess Bi20 3 content in the target ceramic was used to compensate the vaporization o fB i20 , during the sintering and deposition processes. SBT ferroelectric thin films were deposited on Pt/Ti/Si02/Si under optimal RF magnetron sputtering parameters with different substrate temperatures fo r 2 h. After that the SBT thin films were postheated using rapid temperature annealing (RTA) method. The dielectric and electrical characteristics o f the SBT thin films were measured using metal-ferroelectric-metal (MFM) structure. From the physical and electrical measurements o f X-ray diffraction pattern, scanning electronic microscope (SEM), I-V curve, and C-V curve, we had found that the substrate temperature and RTA-treated temperature had large influences on the morphology, the crystalline structure, the leakage current density, and the dielectric constant o f the SBT thin films.

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High dielectric constant (Ba0.65Sr0.35)(Ti0.41Zr0.59)O3 capacitors for Gbit-scale dynamic random access memory devices

Cited by 40 publications

References 11 publications

Fabrication of (Ba_1−xSr_x)(Zr_xTi_1−x)O₃ceramics prepared using the combustion technique

Fabrication of (Ba_1−xSr_x)(Zr_xTi_1−x)O₃ceramics prepared using the combustion technique

Memory and Electrical Properties of (100)‐Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

Effects of Substrate and Annealing Temperatures on the Characteristics of SrBi₄Ti₄O₁₅ Thin Films

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High dielectric constant (Ba0.65Sr0.35)(Ti0.41Zr0.59)O3 capacitors for Gbit-scale dynamic random access memory devices

Cited by 40 publications

References 11 publications

Fabrication of (Ba1−xSrx)(ZrxTi1−x)O3ceramics prepared using the combustion technique

Fabrication of (Ba1−xSrx)(ZrxTi1−x)O3ceramics prepared using the combustion technique

Memory and Electrical Properties of (100)‐Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

Effects of Substrate and Annealing Temperatures on the Characteristics of SrBi4Ti4O15 Thin Films

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Fabrication of (Ba_1−xSr_x)(Zr_xTi_1−x)O₃ceramics prepared using the combustion technique

Fabrication of (Ba_1−xSr_x)(Zr_xTi_1−x)O₃ceramics prepared using the combustion technique

Effects of Substrate and Annealing Temperatures on the Characteristics of SrBi₄Ti₄O₁₅ Thin Films