1993
DOI: 10.1103/physrevb.47.8119
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High dielectric permittivity of ceramic and single-crystalPrBa2Cu3

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Cited by 54 publications
(7 citation statements)
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“…Finally, an inflection in e' appears at approximately 255 K, near the temperature T N where antiferromagnetic ordering occurs in this system. The obtained value of e' at room temperature is about 10 4, a value that is comparable to that have been reported for other high-T~ oxides [24][25][26][27]. The e' curves for the sam-pie annealed at 880°C, with the same selected test frequencies, are plotted in Fig.…”
supporting
confidence: 82%
See 1 more Smart Citation
“…Finally, an inflection in e' appears at approximately 255 K, near the temperature T N where antiferromagnetic ordering occurs in this system. The obtained value of e' at room temperature is about 10 4, a value that is comparable to that have been reported for other high-T~ oxides [24][25][26][27]. The e' curves for the sam-pie annealed at 880°C, with the same selected test frequencies, are plotted in Fig.…”
supporting
confidence: 82%
“…Recently, measurements of the dielectric properties of the insulating phases of YBa2Cu3Or+ 6 [24,25], PrBa2Cu30 7 [26], and La2CuO 4 [27] revealed a high dielectric constant (e'> 10 3) at room temperature and low frequencies. This ferroelectriclike polarization is closely related to the antiferromagnetic ordering of the Cu moments within the Cu-O planes and chains of the samples and was suggested to be a common feature of the high-T c oxides.…”
mentioning
confidence: 99%
“…In recent years, an increasing number of publications on a variety of different materials have appeared that report a qualitatively similar dielectric behavior, namely the occurrence of very large dielectric constants in conjunction with a strong relaxation mode (e.g., [9,10,11,12,13]). New high-ε materials that would avoid the disadvantages of the currently employed ferroelectric materials, namely their strong temperature and field dependence, are highly sought-after for the construction of more effective capacitive elements in electronics.…”
Section: Discussionmentioning
confidence: 99%
“…There is a vast number of materials isostructural to CCTO, which may also show CDCs but have only partly been characterised so far [1,6,28,29,30,31]. But also completely different transition-metal oxides have been reported to exhibit CDCs and it seems that this phenomenon is quite common in this class of materials (e.g., [10,32,33,34,35,36,37,38,39,40,41,42,43,44,45,46,47,48,49,50,51,52]). In addition other mechanisms for the generation of CDCs are considered.…”
Section: Introductionmentioning
confidence: 99%