High Dielectric Properties of Bi_1.5Zn_1.0Nb_1.5O₇ Thin Films Fabricated at Room Temperature

Abstract

Paraelectric, pyrochlore thin films of Bi1.5Zn1.0Nb1.5O7 were fabricated on platinized silicon and Ni‐plated Cu foil by aerosol deposition at room temperature for embedded capacitor applications. The highly dense films thus obtained showed superior dielectric properties without any heat treatment. The dielectric constant and dielectric loss of tan δ of the films at 100 kHz were over 160 and less 0.05, respectively. Furthermore, the films showed markedly superior capacitance density (>100 nF/cm2) and low leakage current density (10−4–10−7 A/cm2 at 3.0 V). The results demonstrated the promising potential for embedded passive components in printed circuit board applications.

Flexible Dielectric Bi1.5Zn1.0Nb1.5O7 Thin Films on a Cu‐Polyimide Foil

“…The BZN film deposited by AD at RT, however, showed relatively weaker and broader pyrochlore peaks than those of the initial powder. Most AD ceramic films showed similar behaviors and such broad XRD peaks are known to be indicative of a film composition of nanosized grains in the amorphous phase 14–17 . It is well known that high energy particle collisions during AD produce films with a small grain size (typically nanometer scale) and a highly disordered crystalline (amorphous) phase 14–17 …”

“…Reagent‐grade raw materials of Bi 2 O 3 , ZnO 2 , and Nb 2 O 5 (99.9%, Aldrich, Milwaukee, WI) were used to prepare the starting powders of the Bi 1.5 Zn 1.0 Nb 1.5 O 7 thin films for AD on a Cu‐electroded polyimide (PI) foil. The detailed powder preparation and AD process were described in our previous report 17 . The film thickness was controlled in the range of 1–18 μm by controlling the number of repetitions of the nozzle scan.…”

“…The aerosol deposition (AD) process is well known as a novel deposition technique for making dense nanocrystalline ceramic films at RT 14–17 . Solid particles are used as raw materials and the films are formed by collision of particles onto a substrate at RT, which makes AD very suitable for the deposition of passive components on flexible polymer‐based substrates.…”

Structural and dielectric properties of Bi2Zn2/3Nb4/3O7 thin films prepared by pulsed laser deposition at low temperature for embedded capacitor applications

“…In general, amorphous paraelectric (such as Ta 2 O 5 , Al 2 O 3 and SiO 2 ) thin films fabricated at low temperature usually exhibit low dielectric constants (<25) [2]. However, in the Bi-based thin films, such as Bi 1.5 Zn 1.0 Nb 1.5 O 7 , Bi 2 Zn 2/3 Nb 4/3 O 7, Bi 2 Mg 2/3 Nb 4/3 O 7, if some nanosized crystallites are present in thin films, these films exhibit high dielectric constants [2][3][4]12].…”

Relation between electrical properties of aerosol-deposited BaTiO3 thin films and their mechanical hardness measured by nano-indentation

“…Because of these demands, the three-dimensional integration of passive components should be realized instead of relying on existing surface-mounted passive components, i.e., two-dimensional integration, owing to the occupation of space by the passives over the entire printed circuit board area [3]. Among the passive components requiring three-dimensional integration, the development of an embedded decoupling capacitor is particularly important for miniaturization and the suppression of EMI and SSN [4,5].…”