High diffusion length silicon germanium alloy thin films deposited by pulsed rf PECVD method

IR laser CVD of nanostructured Si/Ge alloy from silane–germane mixture

“…Silicon and germanium are miscible in all proportions and a number of structural varieties of their alloys have been prepared by several techniques. For example, crystalline SiGe alloys and strained SiGe layers have been obtained by molecular beam epitaxy [3,4] and UHV chemical vapour deposition (CVD) [5], fully amorphous alloys have been produced by plasma-enhanced CVD [6,7], polycrystalline films containing both crystalline and amorphous phase were fabricated by reduced pressure CVD [8], relaxed thin films were acquired by ion implantation technique [9], highly coherent SiGe and Si 4 Ge nanostructures were synthesized by molecular beam epitaxy from single-source Si-Ge bonds-containing hydrides [10] and finally SiGe nanocrystallites in a-Si x Ge 1−x :H matrix [11] were deposited by a plasma CVD process or by sputtering of Si and Ge in hydrogen [12].…”