High-dose argon implantation in silicon studied by X-ray topography

Theoretical and experimental X-ray diffraction investigations of the lattice strain caused in the surface layer of Si single crystals by monoenergetic Au ions (ion energy 120 and 180 keV, doses 1013 and 2 x 1014 ions/cm2, respectively) through implantation are carried out. The traverse-type topography by Lang's method is used. The X-ray radiation absorption and the polarization are taken into account.

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X-ray diffraction investigations of ion-implanted semiconductor crystals

Haroutyunyan¹,

Sedrakyan²,

Subotowicz

1996

Phys. Stat. Sol. (a)

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High-dose argon implantation in silicon studied by X-ray topography

Cited by 1 publication

References 14 publications

X-ray diffraction investigations of ion-implanted semiconductor crystals

X-ray diffraction investigations of ion-implanted semiconductor crystals

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