High Driving Current Selector Based on As-Implanted HfO₂ Thin Film for 3D Phase Change Memory

Abstract

A large crossbar array is desirable for high-density 3D stacking phase change memory (PCM) applications, in which the leakage current is mainly decided by selector devices. Meanwhile, a large driving current is also needed to meet the Reset operation of the PCM cell. Here, we propose a selector based on a nanoscale HfO2 film via As ion implantation, which has a low threshold voltage of 1.9 V, a milliamp-scale high driving current, a large selectivity of 106, fast turn on speed, and good endurance (108 switching cycles). These excellent performances make it applicable in the high-density stacked PCM application.