High dv/dt in High Voltage SiC IGBT and Method of Suppression

Liu, Hangzhi; Guo, Jiaqi; Yue, Wei Thoo; Yu, Hengyu; Liang, Shiwei; Deng, Gaoqiang; Wang, Yuwei; Deng, Linfeng; Zhou, Yuming; Wang, Daming; Shen, Z. John

doi:10.1109/peas53589.2021.9628556

Cited by 2 publications

(1 citation statement)

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“…It was also found that by adjusting the drift layer doping, it is possible to lift the PT voltage above the DC bus voltage, but this results in a non-PT design which leads to significantly increased switching losses [5], [6]. More recently, the authors in [7] suggested a two-step buffer design to allow independent control of the breakdown and switching characteristics of the PT IGBT. However, the simulations were performed under low inductive load of 25A/cm 2 , the dV/dt reduction was rather limited, from 200kV/μs to 120kV/μs, and the impact on the on-state voltage drop was not included in the study.…”

Section: Introductionmentioning

confidence: 99%

10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency

Almpanis,

Evans,

Antoniou

et al. 2023

KEM

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10kV+ rated 4H- Silicon Carbide (SiC) Insulated Gate Bipolar Transistors (IGBTs) have the potential to become the devices of choice in future Medium Voltage (MV) and High Voltage (HV) power converters. However, one significant performance concern of SiC IGBTs is the extremely fast collector voltage rise (dV/dt) observed during inductive turn-off. Studies on the physical mechanisms of high dV/dt in 4H-SiC IGBTs revealed the importance of collector-side design in controlling the phenomenon. In this paper we propose a novel collector-side design approach, which consists of four n-type layers with optimized doping densities and allows the control of dV/dt independently from the device performance. Further, we demonstrate a reduction of dV/dt by 87% without degrading the high switching frequency capability of the device, or the on-state performance, through the addition of two n-type epitaxial layers in the collector side, between the buffer and the drift regions.

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Section: Introductionmentioning

confidence: 99%