2008
DOI: 10.1109/lpt.2008.918857
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High-Efficiency 808-nm InGaAlAs–AlGaAs Double-Quantum-Well Semiconductor Lasers With Asymmetric Waveguide Structures

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Cited by 30 publications
(10 citation statements)
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“…InGaAs/GaAs quantum wells and In(Ga)As self-organized quantum dots have been generally used for the most common GaAs-based A 3 B 5 devices. [2][3][4][5][6][7][8][9][10][11][12][13] In the last decade, there has been interest in using such structures for photovoltaic converters (solar cells (SCs)). [14][15][16][17][18][19][20][21][22][23][24] Insertion of quantum objects (QOs) into the space charge region of a p-n junction gives an opportunity to increase the photocurrent (J g ) generated by SC.…”
mentioning
confidence: 99%
“…InGaAs/GaAs quantum wells and In(Ga)As self-organized quantum dots have been generally used for the most common GaAs-based A 3 B 5 devices. [2][3][4][5][6][7][8][9][10][11][12][13] In the last decade, there has been interest in using such structures for photovoltaic converters (solar cells (SCs)). [14][15][16][17][18][19][20][21][22][23][24] Insertion of quantum objects (QOs) into the space charge region of a p-n junction gives an opportunity to increase the photocurrent (J g ) generated by SC.…”
mentioning
confidence: 99%
“…The parameters of this system are listed in Table II. Note that the combined pumping efficiency is comprised of a series of efficiency factors, including the quantum efficiency η Q = 95%, the Stocks factor η S = 76%, the overlap efficiency η B = 90%, the pump source efficiency η P = 75%, the pump source transfer efficiency η t = 99%, and the pump absorb efficiency η a = 91% [32,36]. Such parameter setting is under the assumption of multiple-transverse-mode operation.…”
Section: A Parameter Settingmentioning
confidence: 99%
“…For these reasons, VCSEL conversion efficiency curves, as displayed below, show rollover at smaller ratiosÎ c /I th compared to, e.g., broad-area EELs for high-power applications. Figure 2.12 contains data points for a record EEL withη c = 75% and I c /I th ≈ 12 [59] and an optimized VCSEL withη c = 62% andÎ c /I th ≈ 7 [24,25]. Since there exists a tradeoff between increasing layer conductivity (leading to small R d ) and decreasing threshold gain (leading to small I th ) while maintaining high differential efficiencies, it becomes clear that obtaining peak conversion efficiencies above 70% is one of the most challenging topics in VCSEL research.…”
Section: Conversion Efficiencymentioning
confidence: 99%