High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region

Wu, Feng; Li, Qing; Wang, Peng; Xia, Hui; Wang, Zhen; Wang, Yang; Luo, Man; Chen, Long; Chen, Fansheng; Miao, Jinshui; Chen, Xiaoshuang; Lü, Wei; Shan, Chongxin; Pan, Anlian; Wu, Xing; Ren, Wencai; Jariwala, Deep; Hu, Weida

doi:10.1038/s41467-019-12707-3

Cited by 263 publications

(265 citation statements)

References 45 publications

Supporting

Mentioning

250

Contrasting

Order By: Relevance

“…The results of sublinear fitting (α = 0.66) suggest that the light interaction of NbS 3 photodetectors is the complex process of electron‐hole generation, trapping, and recombination. [ 43–45 ] Additionally, responsivity ( R ) and specific detectivity ( D * ) are the critical parameter indicators applied to evaluate the performance of photodetectors. The obtained maximum photoresponsivity of NbS 3 photodetectors at 830 nm is 24.7 mA W −1 , through the equation of R = I ph /( P S ), where S is the effective light sensitivity area of the device (Figure 3f).…”

Section: Figurementioning

confidence: 99%

Air‐Stable Low‐Symmetry Narrow‐Bandgap 2D Sulfide Niobium for Polarization Photodetection

Wang

et al. 2020

Advanced Materials

Self Cite

View full text Add to dashboard Cite

Low‐symmetry 2D materials with unique anisotropic optical and optoelectronic characteristics have attracted a lot of interest in fundamental research and manufacturing of novel optoelectronic devices. Exploring new and low‐symmetry narrow‐bandgap 2D materials will be rewarding for the development of nanoelectronics and nano‐optoelectronics. Herein, sulfide niobium (NbS3), a novel transition metal trichalcogenide semiconductor with low‐symmetry structure, is introduced into a narrowband 2D material with strong anisotropic physical properties both experimentally and theoretically. The indirect bandgap of NbS3 with highly anisotropic band structures slowly decreases from 0.42 eV (monolayer) to 0.26 eV (bulk). Moreover, NbS3 Schottky photodetectors have excellent photoelectric performance, which enables fast photoresponse (11.6 µs), low specific noise current (4.6 × 10−25 A2 Hz−1), photoelectrical dichroic ratio (1.84) and high‐quality reflective polarization imaging (637 nm and 830 nm). A room‐temperature specific detectivity exceeding 107 Jones can be obtained at the wavelength of 3 µm. These excellent unique characteristics will make low‐symmetry narrow‐bandgap 2D materials become highly competitive candidates for future anisotropic optical investigations and mid‐infrared optoelectronic applications.

show abstract

Section: Figurementioning

confidence: 99%

Air‐Stable Low‐Symmetry Narrow‐Bandgap 2D Sulfide Niobium for Polarization Photodetection

Wang

et al. 2020

Advanced Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…2D materials including graphene, transition metal dichalcogenides (TMDs), and black phosphorus (BP) with atomic thickness, high carrier mobility, and tunable bandgap have tremendous potential as the promising building blocks for the future electronic and optoelectronic devices . Graphene, as the pioneer of 2D materials, has exhibited abundant physical and chemical properties .…”

Section: Introductionmentioning

confidence: 99%

A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors

Wang

et al. 2019

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

2D layered materials are an emerging class of low-dimensional materials with unique physical and structural properties and extensive applications from novel nanoelectronics to multifunctional optoelectronics. However, the widely investigated 2D materials are strongly limited in high-performance electronics and ultrabroadband photodetectors by their intrinsic weaknesses. Exploring the new and narrow bandgap 2D materials is very imminent and fundamental. A narrow-bandgap noble metal dichalcogenide (PtS 2 ) is demonstrated in this study. The few-layer PtS 2 field-effect transistor exhibits excellent electronic mobility exceeding 62.5 cm 2 V −1 s −1 and ultrahigh on/off ratio over 10 6 at room temperature. The temperature-dependent conductance and mobility of few-layer PtS 2 transistors show a direct metal-to-insulator transition and carrier scattering mechanisms, respectively. Remarkably, 2D PtS 2 photo detectors with broadband photodetection from visible to mid-infrared and a fast photoresponse time of 175 µs at 830 nm illumination for the first time are obtained at room temperature. Our work opens an avenue for 2D noble-metal dichalcogenides to be applied in high-performance electronic and mid-infrared optoelectronic devices.

show abstract

“…Generally, orthorhombic As (ε-As or b-As) is consistent with the cousin of BP and is abundant in natural shining luster mineral [59,60]. Reasonably, in the case of alloy engineering, air-stable and low toxic B-AsP nanosheets with a narrow bandgap of 0.2-0.3 eV in bulk were prepared and used for FET and PD applications [20,61]. As seen in Figure 1A, puckered six-membered rings of As atoms (belongs to Pmna.…”

Section: Arsenicmentioning

confidence: 99%

Novel two-dimensional monoelemental and ternary materials: growth, physics and application

et al. 2020

View full text Add to dashboard Cite

Abstract Two-dimensional (2D) materials have undergone a rapid development toward real applications since the discovery of graphene. At first, graphene is a star material because of the ultrahigh mobility and novel physics, but it always suffered from zero bandgap and limited device application. Then, 2D binary compounds such as transition-metal chalcogenides emerged as complementary materials for graphene due to their sizable bandgap and moderate electrical properties. Recently, research interests have turned to monoelemental and ternary 2D materials. Among them, monoelemental 2D materials such as arsenic (As), antimony (Sb), bismuth (Bi), tellurium (Te), etc., have been the focus. For example, bismuthene can act as a 2D topological insulator with nontrivial topological edge states and high bulk gap, providing the novel platforms to realize the quantum spin-Hall systems. Meanwhile, ternary 2D materials such as Bi2O2Se, BiOX and CrOX (X=Cl, Br, I) have also emerged as promising candidates in optoelectronics and spintronics due to their extraordinary mobility, favorable band structures and intrinsic ferromagnetism with high Curie temperature. In this review, we will discuss the recent works and future prospects on the emerging monoelemental and ternary materials in terms of their structure, growth, physics and device applications.

show abstract

High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region

Cited by 263 publications

References 45 publications

Air‐Stable Low‐Symmetry Narrow‐Bandgap 2D Sulfide Niobium for Polarization Photodetection

Air‐Stable Low‐Symmetry Narrow‐Bandgap 2D Sulfide Niobium for Polarization Photodetection

A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors

Novel two-dimensional monoelemental and ternary materials: growth, physics and application

Contact Info

Product

Resources

About