High efficiency and high power GaN HEMT inverse class-F synchronous rectifier for wireless power applications

Abbasian, Sadegh; Johnson, Thomas

doi:10.1109/eumc.2015.7345759

Cited by 17 publications

(5 citation statements)

References 7 publications

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“…Besides, L X is given by (18). The above equations can realize the load-independent class E rectifiers, which achieve ZPA input impedance and ZVS turn-on over the entire load range with the constant voltage gain.…”

Section: Design Optimizationmentioning

confidence: 99%

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Synchronous Push–Pull Class E Rectifiers With Load-Independent Operation for Megahertz Wireless Power Transfer

Huang

Dou

Lin

et al. 2021

IEEE Trans. Power Electron.

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Section: Design Optimizationmentioning

confidence: 99%

“…Various topologies can realize the high-frequency rectification, such as full-bridge [14], class E [15], class DE [16], class EF [17], class F [18]. Due to the increased switching losses, the rectification efficiency may distinctly reduce when working in the MHz region.…”

Section: Introductionmentioning

confidence: 99%

Synchronous Push–Pull Class E Rectifiers With Load-Independent Operation for Megahertz Wireless Power Transfer

Huang

Dou

Lin

et al. 2021

IEEE Trans. Power Electron.

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“…Rectifiers can then be developed from power amplifiers by substituting the load with the RF input power at the drain, and the gate-matching network is terminated in an open position [16,17]. Numerous scholars have engaged in research centred on the design of transistor-based rectifiers [18,19], where the attainment of high power (10 W) in radio frequency is achievable through the careful selection of diverse transistor types. Nevertheless, a fundamental limitation of transistor-based rectifier circuits is the narrow input power range with effective operation.…”

Section: Introductionmentioning

confidence: 99%

Dual-Module Ultrawide Dynamic-Range High-Power Rectifier for WPT Systems

Yu,

Zhang,

Liu

et al. 2024

Energies

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Rectifier plays a pivotal role in wireless power transfer systems. While numerous studies have concentrated on enhancing efficiency and bandwidth at specific high-power levels, practical scenarios often involve unpredictable power inputs. Consequently, a distinct need arises for a rectifier that demonstrates superior efficiency across a broad range of input power levels. This paper introduces a high-power RF-to-DC rectifier designed for WPT applications, featuring an ultrawide dynamic range of input power. The rectification process leverages a GaN (gallium nitride) high electron mobility transistor (HEMT) to efficiently handle high power levels up to 12.6 W. The matching circuit was designed to ensure that the rectifier will operate in class-F mode. A Schottky diode is incorporated into the design for relatively lower-power rectification. Seamless switching between the rectification modes of the two circuits is accomplished through the integration of a circulator. The proposed rectifier exhibits a 27.5 dB dynamic range, achieving an efficiency exceeding 55% at 2.4 GHz. Substantial improvement in power handling and dynamic range over traditional rectifiers is demonstrated.

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“…While diode rectifiers have simpler structure than the synchronous rectifiers, synchronous rectifiers have higher power handling capability, especially for RF applications [ 9 ]. The high-power GaN HEMT [ 10 ] can be an effective choice for the synchronous rectifier design, due to its high-power and high-frequency switching capabilities (from a few Watts to a few hundred Watts and from a few MHz ranges to several GHz ranges, respectively) [ 11 ].…”

Section: Introductionmentioning

confidence: 99%

2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit

Shin

et al. 2021

Sensors

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This paper proposes a class-F synchronous rectifier using an independent second harmonic tuning circuit for the power receiver of 2.4 GHz wireless power transmission systems. The synchronous rectifier can be designed by inverting the RF output port to the RF input port of the pre-designed class-F power amplifier based on time reversal duality. The design of the class-F power amplifier deploys an independent second harmonic tuning circuit in the matching networks to individually optimize the impedances of the fundamental and the second harmonic. The synchronous rectifier at the 2.4 GHz frequency is designed and implemented using a 6 W gallium nitride high electron mobility transistor (GaN HEMT). Peak RF-dc conversion efficiency of the rectifier of 69.6% is achieved with a dc output power of about 7.8 W, while the peak drain efficiency of the class-F power amplifier is 72.8%.

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High efficiency and high power GaN HEMT inverse class-F synchronous rectifier for wireless power applications

Cited by 17 publications

References 7 publications

Synchronous Push–Pull Class E Rectifiers With Load-Independent Operation for Megahertz Wireless Power Transfer

Synchronous Push–Pull Class E Rectifiers With Load-Independent Operation for Megahertz Wireless Power Transfer

Dual-Module Ultrawide Dynamic-Range High-Power Rectifier for WPT Systems

2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit

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