High-efficiency and low-distortion directly-ion-implanted GaAs power MESFETs for digital personal handy-phone applications

Abstract

We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz /4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.2-V-operation device with a gate width (W W W g g g ) of 2 mm exhibited a power-added efficiency (PAE) of 57.2% and an adjacent channel leakage power (P P P adj ) of 058 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications. The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time.

Characteristics of GaAs Power MESFETs with Double Silicon Ion Implantations for Wireless Communication Applications

“…The alignment and process of the n + source and drain selectively-implanted regions are critical for the characteristics of MESFETs. Lai and coworkers first reported on GaAs power MESFETs using direct ion implantation technology, with silicon (Si) and beryllium (Be) ion implantations, for low-voltage digital wireless communication applications [28]. A 2.2-V-operation GaAs power MESFET with a gate width of 2 mm demonstrated an adjacent channel power rejection (ACPR) of -58 dBc and a PAE of 57.2% at a P out of 21.3 dBm.…”