High Efficiency Cu2ZnSn(S,Se)4 Solar Cells by Applying a Double In2S3/CdS Emitter

Kim, Jeehwan; Hiroi, Homare; Todorov, Teodor K.; Gunawan, Oki; Kuwahara, Masaru; Gokmen, Tayfun; Nair, Dhruv; Hopstaken, Marinus; Shin, Byungha; Lee, Yun Seog; Wang, Wei; Sugimoto, H.; Mitzi, David B.

doi:10.1002/adma.201402373

Cited by 428 publications

(300 citation statements)

References 15 publications

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“…With a direct band gap in the range of 1.0 eV for CZTSe and 1.5 eV for CZTS with high absorption coefficients of >10 4 cm −1 slightly above the band gap, this material family has been demonstrated to be suitable for technological application in thin film solar cell devices [1][2][3][4][5][6][7]. In laboratory cells, the best-reported efficiency for pure selenide based CZTSe solar cells is 11.6% [8], and for CZTSSe material, it amounts to 12.7%, a promising performance for solar cells [9]. Despite these suitable optical properties and rising interest, there are difficulties in applying this material commercially as an absorber in solar cells.…”

Section: Introductionmentioning

confidence: 97%

Optical properties of Cu_2ZnSnSe_4 thin films and identification of secondary phases by spectroscopic ellipsometry

Demircioğlu¹,

Salas²,

Rey³

et al. 2017

Opt. Express

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Abstract:We apply spectroscopic ellipsometry (SE) to identify secondary phases in Cu 2 ZnSnSe 4 (CZTSe) absorbers and to investigate the optical properties of CZTSe. A detailed optical model is used to extract the optical parameters, such as refractive index and extinction coefficient in order to extrapolate the band gap values of CZTSe samples, and to obtain information about the presence of secondary phases at the front and back sides of the samples. We show that SE can be used as a non-destructive method for detection of the secondary phases ZnSe and MoSe 2 and to extrapolate the band gap values of CZTSe phase.

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Section: Introductionmentioning

confidence: 97%

Optical properties of Cu_2ZnSnSe_4 thin films and identification of secondary phases by spectroscopic ellipsometry

Demircioğlu¹,

Salas²,

Rey³

et al. 2017

Opt. Express

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“…Besides the commonly used semiconductors like Si, GaAs, and CdTe, the multiternary compounds are considered to be advantageous for thin-film solar cells. Promising representatives are CuIn 1-x Ga x Se 2 (CIGS), [26][27][28][29] Cu 2 ZnSn(S x Se 1-x ) 4 (CZTSSe), [30][31][32][33][34][35][36][37][38][39][40] and CH 3 NH 3 PbI 3 . [41][42][43][44][45] These semiconductors exhibit direct band transitions, provide large absorption coefficients, and can be easily fabricated as a large-area polycrystalline structure on glass substrates.…”

Section: Thin Film Solar Cell Materials and Luminescence Efficiencymentioning

confidence: 99%

Review—Light Emission from Thin Film Solar Cell Materials: An Emerging Infrared and Visible Light Emitter

Kanemitsu

Okano

Phuong

et al. 2017

ECS J. Solid State Sci. Technol.

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In the last decade, there have been extensive studies on fabrication and physics of thin-film solar cell materials and devices. Many high-efficiency solar cell devices have been developed, and the knowledge gained in these studies can be used advantageously to produce bright light-emitting devices. In this review, we summarize recent luminescence spectroscopic studies on new solar-cell materials and discuss their photocarrier dynamics with respect to efficient light emission. © The Author(s) This special issue focuses on fundamental researches and applications for light emitters and phosphors in the infrared and visible spectral region. Here, we would like to introduce novel approaches, applying insights from thin-film solar-cell materials to the development of new light emitting materials. Recent progress in fundamental research on solar cells is remarkable as novel materials such as perovskite thin films, quantum dots, and colloidal nanocrystals being applied to fabrication of solar cells. Huge efforts in this fundamental research area lead to conversion efficiency improvements for many types of solar cells.1 There exist global demands and attention in establishments of affordable, flexible, light-weight and high conversionefficiency devices.The prerequisite as a light absorber for high-efficiency thin-film solar cells, is a direct band-gap semiconductor with large absorption coefficient and band-gap in the near infrared and visible spectral region. 2One of the best indicators of the intrinsic material quality of a semiconductor, which in turn directly determines the carrier loss in a device, is the internal luminescence quantum efficiency. Therefore, highly luminescent semiconductors are excellent light absorber materials for solar cells [3][4][5][6][7][8] and allow for high open-circuit voltages. 2,9 Reversely, excellent solar-cell light absorber materials could be excellent lightemitting materials. In fact, the electroluminescence (EL) measurement is a well-established and widely-used technique for characterizing solar cell devices.10-17 Furthermore, time-resolved photoluminescence (PL) spectroscopy based on modern laser techniques have revealed the charge carrier flow in bulk materials as well as in devices.18-23 PL and EL spectroscopy techniques are not limited to material characterization, but are also able to characterize devices. Taking account of these close relations, utilizing insights and understandings obtained from solar cell research is strategic for developments in novel luminescent materials and devices in the near infrared and visible spectral region.In this short review, we briefly summarize luminescence properties of thin-film solar cell materials that have been recently developed as thin-film light absorbers. By further discussing the photocarrier dynamics, we are able to understand how these materials can be used optimally as light emitters in novel devices. The abundant information from solar cell research can be applied to other devices as well. A deep understanding of the carrier phy...

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“…However, development of solar cells based on kesterite has been slow, achieving a maximum efficiency of only 12.6% [1]. Cu 2 SnS 3 is a p-type semiconductor just like kesterite, but contains one element less thus reducing the number of possible secondary phases and defects.…”

Section: Introductionmentioning

confidence: 99%

Electrodeposition of germanium-containing precursors for Cu2(Sn,Ge)S3 thin film solar cells

Malaquias

Lin

et al. 2017

Electrochimica Acta

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A B S T R A C TCu 2 (Sn,Ge)S 3 has recently emerged as an absorber layer for single junction thin film solar cells, already achieving power conversion efficiencies of up to 6.7%. Electrodeposition of metallic precursors and their subsequent annealing is an attractive synthesis method for such solar cell absorber layers, since it does not require vacuum conditions and little energy is consumed. The aqueous electrodeposition of metallic germanium based on current knowledge is limited to very thin layers, which do not provide the stoichiometric amount of material required for thick semiconductor layers. Therefore we introduce an electrodeposition method for the growth of germanium-containing precursors for Cu 2 (Sn,Ge)S 3 , using propylene-glycol-based electrolytes. These baths do not require additives, give rates of germanium electrodeposition higher than other plating baths and are cheap. The electrochemical behaviour of copper, tin and germanium in propylene glycol was studied and the corresponding deposits were characterised. Smooth and compact layers of each of the pure elements were deposited. Additionally, the co-electrodeposition of copper and germanium was studied as well and thin films containing the alloy Cu 3 Ge and metallic copper were obtained. A constant [Cu]/[Ge] ratio of around 3 was found over a wide potential range, with a higher plating efficiency than that of pure germanium. For these reasons, copper and germanium were incorporated into the precursor via the referred co-deposition method. After thermal annealing in the presence of elemental sulphur, the semiconductor Cu 2 (Sn,Ge)S 3 was successfully formed and it was incorporated in a working solar cell structure with efficiency of 0.7%

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High Efficiency Cu₂ZnSn(S,Se)₄ Solar Cells by Applying a Double In₂S₃/CdS Emitter

Cited by 428 publications

References 15 publications

Optical properties of Cu_2ZnSnSe_4 thin films and identification of secondary phases by spectroscopic ellipsometry

Optical properties of Cu_2ZnSnSe_4 thin films and identification of secondary phases by spectroscopic ellipsometry

Review—Light Emission from Thin Film Solar Cell Materials: An Emerging Infrared and Visible Light Emitter

Electrodeposition of germanium-containing precursors for Cu2(Sn,Ge)S3 thin film solar cells

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