High efficiency Cu₂ZnSnS₄ solar cells over FTO substrates and their CZTS/CdS interface passivation via thermal evaporation of Al₂O₃

Abstract

Fabrication on SLG/FTO transparent substrates gives an important advance to fabrication of tandem solar cells. In addition, a possible passivation using Al2O3 which can be deposited with cheap systems can...

Towards Low Cost and Sustainable Thin Film Thermoelectric Devices Based on Quaternary Chalcogenides

“…The chalcogenization thermal profiles and conditions have been optimized for the growth of kesterite thin film for photovoltaic applications, as previously described in refs. [46][47][48][49]. An illustration of the thermal profiles is presented in the Supporting Information.…”

“…Surprisingly, it emerges a substantial scarcity of TE investigation for the thin film configuration of these materials, [67,68] despite the vast knowledge acquired in their fabrication and PV characterization. [46,[69][70][71] Following literature guidelines on bulk counterparts, [60,66] a 12.5% Cu doped (in place of Zn) composition is selected for the thin films fabricated in this work.…”

Interface Engineering of CZTS/TiO2Heterojunction Using Wide‐Bandgap Ga2O3Passivation Interlayer for Efficient Charge Extraction

“…[10,[13][14][15] In CZTS solar cells, various wide-bandgap thin insulating metal oxide films such as Al 2 O 3 and SnO 2 are incorporated at heterointerface to passivate the CZTS surface defects and electrically active interfacial trap states to mitigate the back interface recombination. [12,16,17] The influence of insulating material Al 2 O 3 has been investigated widely in CZTS solar cells at the front interfacial contact as well as at the back contact of CZTS DOI: 10.1002/pssa.202200001…”

“…absorber. [16,18,19] Al 2 O 3 effectively passivates the surface and interface states, improves the collection efficiency, and hence results in enhanced device performance. Sun et al revealed that the implemented SnO 2 film behaves as an electron-selective contact for CZTS and blocks the holes away from the buffer layer.…”

“…[ 12,16,17 ] The influence of insulating material Al 2 O 3 has been investigated widely in CZTS solar cells at the front interfacial contact as well as at the back contact of CZTS absorber. [ 16,18,19 ] Al 2 O 3 effectively passivates the surface and interface states, improves the collection efficiency, and hence results in enhanced device performance. Sun et al revealed that the implemented SnO 2 film behaves as an electron‐selective contact for CZTS and blocks the holes away from the buffer layer.…”