“…In general, the properties of n-type materials are affected by three key factors in phosphor-based devices, including electron mobility, hole blocking ability and T 1 1 2 . On one hand, since the electron mobilities of Alq 3 , BAlq, Bebq 2 and TPBi are 10 −5 cm 2 /(V s) 21 , 10 −5 cm 2 /(V s) 24 , 10 −4 cm 2 /(V s) and 10 −4 cm 2 /(V s) 25 , respectively, electrons may be easier to pass through the Bebq 2 and TPBi IL than Alq 3 and BAlq IL, which leads to much more blue intensity in W4 and W5 than W2 and W3, and stronger red emissions are expected in W2 and W3. On the other hand, since the HOMOs of Alq 3 , BAlq, Bebq 2 and TPBi are 5.8 eV 21 , 5.9 eV 24 , 5.995 eV 26 and 6.2 eV 25 , respectively, holes may be difficult to pass through the TPBi IL than Alq 3 , BAlq and Bebq 2 IL, which results in much more red intensity in W2, W3 and W4 than W5.…”