2014
DOI: 10.1364/ol.39.002649
|View full text |Cite
|
Sign up to set email alerts
|

High-efficiency diode-pumped actively Q-switched ceramic Nd:YAG/BaWO_4 Raman laser operating at 1666  nm

Abstract: A diode-pumped actively Q-switched Raman laser employing BaWO4 as the Raman active medium and a ceramic Nd:YAG laser operating at 1444 nm as the pump source is demonstrated. The first-Stokes-Raman generation at 1666 nm is achieved. With a pump power of 20.3 W and pulse repetition frequency rate of 5 kHz, a maximum output power of 1.21 W is obtained, which is the highest output power for a 1.6 μm Raman laser. The corresponding optical-to-optical conversion efficiency is 6%; the pulse energy and peak power are 2… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2015
2015
2024
2024

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 10 publications
(1 citation statement)
references
References 15 publications
0
1
0
Order By: Relevance
“…However, the maximum output power of Er 3+ /Yb 3+ co-doped crystals is only ~2 W due to the low thermal conductivity and the strong up-conversion loss [6]. Another alternative is to utilize nonlinear frequency conversion, such as an optical parametric oscillator (OPO) or a Raman laser [7][8][9][10]. The optical parametric oscillator, based on 5 mol% MgO-doped periodically poled lithium niobate (MgO:PPLN) crystals, has attracted extensive attention in recent years due to its high conversion efficiency, wide wavelength tunability and ease of chip integration [11].…”
Section: Introductionmentioning
confidence: 99%
“…However, the maximum output power of Er 3+ /Yb 3+ co-doped crystals is only ~2 W due to the low thermal conductivity and the strong up-conversion loss [6]. Another alternative is to utilize nonlinear frequency conversion, such as an optical parametric oscillator (OPO) or a Raman laser [7][8][9][10]. The optical parametric oscillator, based on 5 mol% MgO-doped periodically poled lithium niobate (MgO:PPLN) crystals, has attracted extensive attention in recent years due to its high conversion efficiency, wide wavelength tunability and ease of chip integration [11].…”
Section: Introductionmentioning
confidence: 99%