High-Efficiency Electron Source with a Hollow Cathode in Technologies of Thin Film Deposition and Surface Treatment under Forevacuum Pressures

Shchukin, V. G.; Konstantinov, V. O.; Морозов, В. С.

doi:10.1134/s1063784218060191

Cited by 14 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A scheme of the experimental setup is shown in Figure 1. The electron beam 1 was generated in an electron source 2 based on a hollow-cathode discharge, which was developed at the Institute by the group headed by Dr. Sharafutdinov [8].…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Hollow cathode gun for electron beam annealing

Konstantinov

Shchukin

2021

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

An electron gun with a hollow cathode was tuned to be used in electron beam annealing. Electron beams with an energy of 1 keV and a current of 100 mA were obtained. It is shown that the diameter of the electron beam varies in the range from 7 to 5 mm, while the specific power is from 2·105 to 2·104 W/m2. Such electron beams have a soft, non-destructive effect on the surface and are suitable for electron beam annealing of various films.

show abstract

Section: Methodsmentioning

confidence: 99%

“…This work is devoted to the optimization of an electron source [8] based on a discharge with a hollow cathode for its use in electron-beam annealing of thin films.…”

Section: Introductionmentioning

confidence: 99%

Hollow cathode gun for electron beam annealing

Konstantinov

Shchukin

2021

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

show abstract

“…Further, to anneal the as-deposited films, an electron beam generated by a discharge electron gun with a hollow cathode was used [18]. The current density of the electron beam was 20 mA/cm 2 at an accelerating voltage of 2000 V. The choice of the annealing mode parameters is due to the results from the article [19], where it is shown that for an electron beam with an accelerating voltage of 1000 V and a current of 100 mA, even at an annealing time of 600 s, polysilicon was not formed, and the action of an electron beam with an accelerating voltage of 3000 V and a similar current led to the evaporation of a-SiO x :H thin film for 60 s. The sample surface area of electron beam irradiation beam was 0.3 cm 2 .…”

Section: Experiments Descriptionmentioning

confidence: 99%

Formation of germanium nanocrystals and amorphous nanoclusters in GeO[SiO] and GeO[SiO-=SUB=-2-=/SUB=-] films using electron beam annealing

et al. 2022

View full text Add to dashboard Cite

Electron beam annealing was carried out to form amorphous and crystalline germanium clusters in GeO[SiO] and GeO[SiO2] films deposited on quartz and monocrystalline silicon substrates. Using electron microscopy, Raman spectroscopy, and light transmission and reflection spectroscopy, the structural transformations of the films and their optical properties were studied. From the analysis of Raman spectra, it was shown that amorphous germanium nanoclusters are present in the as-deposited GeO[SiO] film, while they are not observed in the as-deposited GeO[SiO2] film. Regimes of electron beam annealing which are necessary for the formation of germanium nanocrystals in GeO[SiO] and GeO[SiO2] films were found. It was shown that, at the same annealing parameters, the fraction of the crystalline phase of germanium in GeO[SiO] films were smaller than in GeO[SiO2] films. In addition, it was found that the fraction of the crystalline phase at the same annealing parameters is larger for films on a quartz substrate than on monocrystalline silicon substrate. The sizes of germanium nanocrystals formed as a result of electron beam annealing were determined from Raman spectra analysis. The proposed method of obtaining amorphous germanium nanoclusters and nanocrystals in films of nonstoichiometric germanosilicate glasses using electron beam annealing can be used to create ordered arrays of such nanostructures. Keywords: films of nonstoichiometric germanosilicate glass, electron beam annealing, germanium nanoclusters and nanocrystals.

show abstract